Effect of gate engineering in double-gate MOSFETs for analog/RF applications
This work uncovers the potential benefit of fully-depleted short-channel triple-material
double-gate (TM-DG) SOI MOSFET in the context of RF and analog performance …
double-gate (TM-DG) SOI MOSFET in the context of RF and analog performance …
A junctionless nanowire transistor with a dual-material gate
A dual-material-gate junctionless nanowire transistor (DMG-JNT) is proposed in this paper.
Its characteristic is demonstrated and compared with a generic single-material-gate JNT …
Its characteristic is demonstrated and compared with a generic single-material-gate JNT …
An investigation of linearity performance and intermodulation distortion of GME CGT MOSFET for RFIC design
P Ghosh, S Haldar, RS Gupta… - IEEE transactions on …, 2012 - ieeexplore.ieee.org
In this paper, an extensive study on the intermodulation distortion and the linearity of gate-
material-engineered cylindrical-gate MOSFET (GME CGT MOSFET) has been done, and the …
material-engineered cylindrical-gate MOSFET (GME CGT MOSFET) has been done, and the …
Drain work function engineered do**-less charge plasma TFET for ambipolar suppression and RF performance improvement: a proposal, design, and investigation
A novel device configuration is presented for do**-less charge plasma tunnel FET (TFET)
for suppression of ambipolar nature with improved high-frequency figures of merit. For this …
for suppression of ambipolar nature with improved high-frequency figures of merit. For this …
Current-voltage analytical model and multiobjective optimization of design of a short channel gate-all-around-junctionless MOSFET
In this paper we investigate the optimized design of a short channel gate-all-around-
junctionless (GAAJ) metal-oxidesemiconductor field-effect-transistor (MOSFET), including …
junctionless (GAAJ) metal-oxidesemiconductor field-effect-transistor (MOSFET), including …
Analytical modeling of a dual-material graded-channel cylindrical gate-all-around FET to minimize the short-channel effects
In this paper, an analytical model for center potential and threshold voltage is developed for
a dual-material graded-channel cylindrical gate-all-around (DMGC CGAA) FET by …
a dual-material graded-channel cylindrical gate-all-around (DMGC CGAA) FET by …
Subthreshold performance of in 1–x Ga x as based dual metal with gate stack cylindrical/surrounding gate nanowire MOSFET for low power analog applications
In this paper, In 1–x Ga x As based Dual Metal with Gate Stack Cylindrical/Surrounding Gate
Nanowire MOSFET (DMGS CG/SG NWFET) has been proposed for the first time to achieve …
Nanowire MOSFET (DMGS CG/SG NWFET) has been proposed for the first time to achieve …
Silicon complementary metal–oxide–semiconductor field-effect transistors with dual work function gate
KY Na, YS Kim - Japanese journal of applied physics, 2006 - iopscience.iop.org
This paper discusses silicon complementary metal–oxide–semiconductor (CMOS) field-
effect transistors with dual work function gates (DWFG) to improve transconductance (gm) …
effect transistors with dual work function gates (DWFG) to improve transconductance (gm) …
An accurate model for threshold voltage analysis of dual material double gate metal oxide semiconductor field effect transistor
In this article, an accurate representation of threshold voltage for double metal double gate
(DMDG) device structure has been initiated. It is the lowest gate-source electromotive force …
(DMDG) device structure has been initiated. It is the lowest gate-source electromotive force …
A novel approach to improve the performance of charge plasma tunnel field-effect transistor
A distinct approach is presented for realizing charge plasma tunnel field-effect transistor (CP
TFET) wherein p+ substrate is taken as silicon film and then metal electrodes with specific …
TFET) wherein p+ substrate is taken as silicon film and then metal electrodes with specific …