In the current information age, the realization of memory devices with energy efficient
design, high storage density, nonvolatility, fast access, and low cost is still a great challenge …

Magnetoresistance (MR) is the variation of a material's resistivity under the presence of
external magnetic fields. Reading heads in hard disk drives (HDDs) are the most common …

Non-volatile storage memory is widely considered to be one of the most promising
candidates to replace dynamic random access memory and even static random access …

The recent progress of selector and self‐rectifying devices for resistive random‐access
memory applications is reviewed. In particular, the performance of crossbar arrays based on …

Recent progress in the development of artificial intelligence technologies, aided by deep
learning algorithms, has led to an unprecedented revolution in neuromorphic circuits …

The search for materials for next-generation spintronic applications has witnessed
exponentially increasing interest, mainly due to the explosive development of numerous two …

ABSTRACT BiFeO3-CoFe2O4 (BFO-CFO) vertically aligned nanocomposite (VAN) thin-film
promises great potentials for next-generation electronic devices. Its strong magnetoelectric …

Their high tunability of electronic and magnetic properties makes transition‐metal oxides
(TMOs) highly intriguing for fundamental studies and promising for a wide range of …

Increasing demand for large capacity data storage can only be fulfilled by hard disk drives
(HDDs) and to some extent by solid-state drives (SSDs). However, HDDs are favorable in …

In the era of social media, storage of information plays an important role. Magnetic domain
wall memory devices are promising alternatives to hard disk drives for high‐capacity …