Abstract Semiconducting barium disilicide (BaSi 2), which is composed of earth-abundant
elements, has attractive features for thin-film solar cell applications. Both a large absorption …

We investigated the effect of a 3-nm-thick amorphous Si (a-Si) cap** layer on the hole
transport properties of BaSi 2 films. The contact resistance decreased with decreasing …

Semiconducting BaSi 2 has attractive features for thin-film solar cell applications because
both a large absorption coefficient and a long minority-carrier diffusion length can be …

We have successfully determined the bulk minority-carrier lifetime in BaSi 2 epitaxial films by
utilizing a drastic enhancement of lifetime by post-growth annealing at 800 C, which is …

Undoped 0.5-μm-thick BaSi 2 epitaxial films were grown on Si (111) substrates with various
ratios of the Ba deposition rate to the Si deposition rate (R Ba/R Si) ranging from 1.0 to 5.1 …

B-doped p-BaSi 2 epitaxial layers with a hole concentration of 1.1× 10 18 cm− 3 were grown
on n-Si (001) using molecular beam epitaxy to fabricate p-BaSi 2/n-Si solar cells. The …

We have fabricated approximately 0.5-μm-thick undoped n-BaSi 2 epitaxial films with
various average grain areas ranging from 2.6 to 23.3 μm 2 on Si (111) by molecular beam …

The effect of low growth rate deposition (LGD) of BaSi 2 on the film quality and performance
of silicon heterojunction solar cells was investigated. The total thickness of the BaSi 2 layer …

In order to meet the increasing demand for electric power generation from solar energy
conversion, the development of efficient light absorber materials has been awaited. To this …

BaSi2 is a promising absorber material for next-generation thin-film solar cells (TFSCs). For
high-efficiency TFSCs, a suitable interlayer should be found for every light absorber …