Hafnium oxide (HfO2) is one of the mature high‐k dielectrics that has been standing strong
in the memory arena over the last two decades. Its dielectric properties have been …

In this manuscript, recent progress in the area of resistive random access memory (RRAM)
technology which is considered one of the most standout emerging memory technologies …

The rapid development of information technology has led to urgent requirements for high
efficiency and ultralow power consumption. In the past few decades, neuromorphic …

Resistive switching (RS) is an interesting property shown by some materials systems that,
especially during the last decade, has gained a lot of interest for the fabrication of electronic …

With the explosive growth of digital data in the era of the Internet of Things (IoT), fast and
scalable memory technologies are being researched for data storage and data-driven …

Resistive switching (RS) phenomena are reversible changes in the metastable resistance
state induced by external electric fields. After discovery∼ 50 years ago, RS phenomena …

In this paper, recent progress of binary metal–oxide resistive switching random access
memory (RRAM) is reviewed. The physical mechanism, material properties, and electrical …

The resistance switching behaviour of several materials has recently attracted considerable
attention for its application in non-volatile memory (NVM) devices, popularly described as …

Resistance switching in metal oxides could form the basis for next-generation non-volatile
memory. It has been argued that the current in the high-conductivity state of several …

This review article summarized the recent understanding of resistance switching (RS)
behavior in several binary oxide thin film systems. Among the various RS materials and …