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Low-power electronic technologies for harsh radiation environments
J Prinzie, FM Simanjuntak, P Leroux… - Nature Electronics, 2021 - nature.com
Electronic technologies that can operate in harsh radiation environments are important in
space, nuclear and avionic applications. However, radiation-hardened (rad-hard) integrated …
space, nuclear and avionic applications. However, radiation-hardened (rad-hard) integrated …
Conductive bridging random access memory—materials, devices and applications
MN Kozicki, HJ Barnaby - Semiconductor Science and …, 2016 - iopscience.iop.org
We present a review and primer on the subject of conductive bridging random access
memory (CBRAM), a metal ion-based resistive switching technology, in the context of current …
memory (CBRAM), a metal ion-based resistive switching technology, in the context of current …
An artificial nociceptor based on a diffusive memristor
A nociceptor is a critical and special receptor of a sensory neuron that is able to detect
noxious stimulus and provide a rapid warning to the central nervous system to start the …
noxious stimulus and provide a rapid warning to the central nervous system to start the …
Radiation effects in advanced and emerging nonvolatile memories
MJ Marinella - IEEE Transactions on Nuclear Science, 2021 - ieeexplore.ieee.org
Despite hitting major roadblocks in 2-D scaling, NAND flash continues to scale in the vertical
direction and dominate the commercial nonvolatile memory market. However, several …
direction and dominate the commercial nonvolatile memory market. However, several …
Reconfigurable memristive device technologies
AH Edwards, HJ Barnaby, KA Campbell… - Proceedings of the …, 2015 - ieeexplore.ieee.org
In this paper, we present a review of the state of the art in memristor technologies. Along with
ionic conducting devices [ie, conductive bridging random access memory (CBRAM)], we …
ionic conducting devices [ie, conductive bridging random access memory (CBRAM)], we …
Radiation‐tolerant electronic devices using wide bandgap semiconductors
Z Muhammad, Y Wang, Y Zhang… - Advanced Materials …, 2023 - Wiley Online Library
The aspiration of electronic technologies that are resistant to high‐energy cosmic radiation
is essential for current harsh radiation environment exploration. Integrated circuits mostly …
is essential for current harsh radiation environment exploration. Integrated circuits mostly …
Review of radiation effects on ReRAM devices and technology
Y Gonzalez-Velo, HJ Barnaby… - … Science and Technology, 2017 - iopscience.iop.org
A review of the ionizing radiation effects on resistive random access memory (ReRAM)
technology and devices is presented in this article. The review focuses on vertical devices …
technology and devices is presented in this article. The review focuses on vertical devices …
Total ionizing dose hardened and mitigation strategies in deep submicrometer CMOS and beyond
E Chatzikyriakou, K Morgan… - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
From man-made satellites and interplanetary missions to fusion power plants, electronic
equipment that needs to withstand various forms of irradiation is an essential part of their …
equipment that needs to withstand various forms of irradiation is an essential part of their …
Single-event effect performance of a commercial embedded ReRAM
D Chen, H Kim, A Phan, E Wilcox… - … on Nuclear Science, 2014 - ieeexplore.ieee.org
We show the single-event effect characteristics of a production-level embedded resistive
memory. The resistive memory under investigation is a reduction-oxidation random access …
memory. The resistive memory under investigation is a reduction-oxidation random access …
Physical origins and suppression of Ag dissolution in GeS x-based ECM cells
J van den Hurk, AC Dippel, DY Cho… - Physical Chemistry …, 2014 - pubs.rsc.org
Electrochemical metallisation (ECM) memory cells potentially suffer from limited memory
retention time, which slows down the future commercialisation of this type of data memory. In …
retention time, which slows down the future commercialisation of this type of data memory. In …