Defect engineering involves manipulating the type, concentration, spatial distribution, or
mobility of defects within a crystalline solid. Defect engineering in semiconductors has …

Ion and electron irradiation can be used to modify not only conventional materials such as
silicon, but also nanostructures. This opens up exciting possibilities for basic science studies …

We investigate the thermal stability of boron-doped junctions formed by Ge
preamorphization and solid phase epitaxial regrowth. Isochronal annealing and …

A physically motivated model that accounts for the spatial and temporal evolution of self-
interstitial agglomerates in ion-implanted Si is presented. For the calibration of the model, a …

Abstract In situ Transmission Electron Microscopy irradiations were performed on
polycrystalline UO 2 thin foils with 4 MeV gold ions at three different temperatures: 600° C …

Damage evolution and dopant distribution during nanosecond laser thermal annealing of
ion implanted silicon have been investigated by means of transmission electron microscopy …

Ion implantation is a technology suitable for the formation of high quality junctions in silicon
solar cell processing. As screen-printing is the state of the art metallization technique for …

The controlled do** of germanium by ion implantation is a process which requires basic
research before optimization. For this reason, we have experimentally studied by …

A key issue associated with the continuous reduction of dimensions of CMOS transistors is
the realization of highly conductive, ultra-shallow junctions for source/drain extensions …

The formation and evolution of small cluster defects in 500 eV, 1× 10 15 cm− 2 boron-
implanted silicon is investigated. These clusters are identified by high-resolution …