Effect of proton irradiation on interfacial and electrical performance of N+ Np+ InP/InGaAs hetero-junction
C Zhang, Y Su, B Mei, F Yang, J Zhang, H Yun… - Current Applied …, 2023 - Elsevier
InP-based hetero-junction bipolar transistors (HBTs) are attractive for various millimeter-
wave and terahertz electronics due to their ultrahigh frequency performance. Therefore, the …
wave and terahertz electronics due to their ultrahigh frequency performance. Therefore, the …
GaAsP/InGaP HBTs grown epitaxially on Si substrates: Effect of dislocation density on DC current gain
Heterojunction bipolar transistors (HBTs) with GaAs 0.825 P 0.175 bases and collectors and
In 0.40 Ga 0.60 P emitters were integrated monolithically onto Si substrates. The HBT …
In 0.40 Ga 0.60 P emitters were integrated monolithically onto Si substrates. The HBT …
[HTML][HTML] In0. 49Ga0. 51P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates: Effects of base thickness, base and sub-collector do** …
We report performance of InGaP/GaAs heterojunction bipolar transistors (HBTs) fabricated
on epitaxial films directly grown onto 200 mm silicon (Si) substrates using a thin 100 …
on epitaxial films directly grown onto 200 mm silicon (Si) substrates using a thin 100 …
High Uniformity 6-Inch InGaP Epitaxial Growth
S Yang, N Guo, Y Pei, W Yuan, Y Li, S Zhao, Y Zhang… - Crystals, 2023 - mdpi.com
The growth of 6-inch In0. 485Ga0. 515P has been examined in this study. The effects of
growth temperature, the V/III ratio, and the H2 total flow on solid composition, growth rate …
growth temperature, the V/III ratio, and the H2 total flow on solid composition, growth rate …
[PDF][PDF] This document is downloaded from DR-NTU, Nanyang Technological University Library, Singapore.
abstract The authors examined relations between implicit and explicit Hope of Success (HS)
and Fear of Failure (FF) and memory and liking for successful and unsuccessful peers …
and Fear of Failure (FF) and memory and liking for successful and unsuccessful peers …
In₀. ₄₉ Ga₀. ₅₁ P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates: Effects of base thickness, base and sub-collector do** concentrations
EA Fitzgerald - 2018 - dspace.mit.edu
We report performance of InGaP/GaAs heterojunction bipolar transistors (HBTs) fabricated
on epitaxial films directly grown onto 200 mm silicon (Si) substrates using a thin 100 …
on epitaxial films directly grown onto 200 mm silicon (Si) substrates using a thin 100 …
GaAsP/InGaP heterojunction bipolar transistors for III-V on Si microelectronics
C Heidelberger - 2017 - dspace.mit.edu
GaAs-based transistors are capable of operating at high frequency with low noise, and are
produced in large volumes for a wide range of applications including microwave frequency …
produced in large volumes for a wide range of applications including microwave frequency …