Basal-plane stacking faults are an important class of optically active structural defects in
wurtzite semiconductors. The local deviation from the 2H stacking of the wurtzite matrix to a …

An overall understanding of the carrier dynamics in two-dimensional transition metal
dichalcogenides (TMDs) is necessary to improve the quantum efficiencies and …

In recent years, GaN nanorods are emerging as a very promising novel route toward devices
for nano-optoelectronics and nano-photonics. In particular, core-shell light emitting devices …

ZnO single crystals, epilayers, and nanostructures often exhibit a variety of narrow emission
lines in the spectral range between 3.33 and 3.35 eV which are commonly attributed to …

Epitaxial growth of GaN nanowires on graphene is demonstrated using molecular beam
epitaxy without any catalyst or intermediate layer. Growth is highly selective with respect to …

Vertically aligned GaN nanorods have recently obtained substantial interest as a new
approach to solid state lighting. In comparison to conventional planar LEDs, 3D NanoLEDs …

Semiconductor nanowires (NWs) are characterized by an extraordinarily large surface-to-
volume ratio. Consequently, surface effects are expected to play a much larger role than in …

We present a detailed study of the effects of dangling bond passivation and the comparison
of different sulfide passivation processes on the properties of InGaN/GaN quantum-disk …

We experimentally investigate whether crystal polarity affects the growth of GaN nanowires
in plasma-assisted molecular beam epitaxy and whether their formation has to be induced …

We demonstrate an all-epitaxial and scalable growth approach to fabricate single-crystalline
GaN nanowires on graphene by plasma-assisted molecular beam epitaxy. As substrate, we …