Germanium based field-effect transistors: Challenges and opportunities
The performance of strained silicon (Si) as the channel material for today's metal-oxide-
semiconductor field-effect transistors may be reaching a plateau. New channel materials …
semiconductor field-effect transistors may be reaching a plateau. New channel materials …
Challenges and opportunities in advanced Ge pMOSFETs
E Simoen, J Mitard, G Hellings, G Eneman… - Materials Science in …, 2012 - Elsevier
This paper aims at reviewing the state-of-the art of Ge pMOSFETs for future high-
performance CMOS devices. Key in the development is the integration of a Ge channel on a …
performance CMOS devices. Key in the development is the integration of a Ge channel on a …
Engineered substrates for future More Moore and More than Moore integrated devices
L Clavelier, C Deguet, L Di Cioccio… - 2010 International …, 2010 - ieeexplore.ieee.org
In 1991, M. Bruel (1) invented and patented the Smart Cut technology to fabricate Silicon On
Insulator (SOI) substrates. The process relies on the transfer of a high quality single crystal …
Insulator (SOI) substrates. The process relies on the transfer of a high quality single crystal …
[HTML][HTML] Berberine protects against 6-OHDA-induced neurotoxicity in PC12 cells and zebrafish through hormetic mechanisms involving PI3K/AKT/Bcl-2 and Nrf2/HO-1 …
Berberine (BBR) is a renowned natural compound that exhibits potent neuroprotective
activities. However, the cellular and molecular mechanisms are still unclear. Hormesis is an …
activities. However, the cellular and molecular mechanisms are still unclear. Hormesis is an …
III–V/Ge channel MOS device technologies in nano CMOS era
CMOS utilizing high-mobility III–V/Ge channels on Si substrates is expected to be one of the
promising devices for high-performance and low power advanced LSIs in the future …
promising devices for high-performance and low power advanced LSIs in the future …
Germanium based photonic components toward a full silicon/germanium photonic platform
V Reboud, A Gassenq, JM Hartmann, J Widiez… - Progress in Crystal …, 2017 - Elsevier
Lately, germanium based materials attract a lot of interest as they can overcome some limits
inherent to standard Silicon Photonics devices and can be used notably in Mid-Infra-Red …
inherent to standard Silicon Photonics devices and can be used notably in Mid-Infra-Red …
Germanium–Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 Passivation
In this letter, we report the first study of the dependence of carrier mobility and drive current I
Dsat of Ge 0.958 Sn 0.042 p-channel metal-oxide-semiconductor field-effect transistors …
Dsat of Ge 0.958 Sn 0.042 p-channel metal-oxide-semiconductor field-effect transistors …
A Steep Slope MBE-Grown Thin p-Ge Channel FETs on Bulk Ge-on-Si Using HZO Internal Voltage Amplification
S Choudhary, D Schwarz, HS Funk… - … on Electron Devices, 2022 - ieeexplore.ieee.org
There are vital challenges to harness the unique assets of germanium (Ge) because of Ge-
on-insulator (GeOI) processing issues. The advances in molecular beam epitaxy (MBE) …
on-insulator (GeOI) processing issues. The advances in molecular beam epitaxy (MBE) …
The limit of anisotropic epitaxial lateral overgrowth in heteroepitaxial systems
The separation of Ge and Si by an electrically isolating dielectric layer is essential to yield
high efficiency for optical telecommunication applications and electronic applications such …
high efficiency for optical telecommunication applications and electronic applications such …
Characterization of electron mobility in ultrathin body germanium-on-insulator metal-insulator-semiconductor field-effect transistors
We have systematically investigated electron mobility behaviors in germanium-on-insulator
(GeOI) metal-oxide-semiconductor field-effect transistors (MOSFETs) with reducing the Ge …
(GeOI) metal-oxide-semiconductor field-effect transistors (MOSFETs) with reducing the Ge …