With the transition from planar to three-dimensional device architectures, devices such as
FinFETs, TFETs and nanowires etc. become omnipresent. This requires the dopant atom …

Silicon has such versatile characteristics that the mechanical behavior and deformation
mechanism under contact load are still unclear and hence are interesting and challenging …

Nanoelectronics is changing the way the world communicates, and is transforming our daily
lives. Continuing Moore's law and miniaturization of low-power semiconductor chips with …

Replacing the liquid electrolyte in lithium batteries with solid‐state ion conductor is
promising for next‐generation energy storage that is safe and has high energy density …

MX monopnictide compounds (M= Nb, Ta, X= As, P) are prototypical 3D Weyl semimetals
(WSMs) that have been shown in bulk single crystal form to have potential for a wide variety …

The precise characterization of the do** profile is crucial for optimizing the performance
and structural integrity of semiconductor devices. As the size of semiconductor devices …

Indentation-induced phase transformation processes were studied by in situ Raman
microspectroscopy of the deformed contact region of silicon on sapphire samples during …

Shear-induced segregation, by particle size, is known in the flow of colloids and granular
media, but is unexpected at the atomic level in the deformation of solid materials, especially …

Optimizing group-V do** and Se alloying are two main focuses for advancing CdTe
photovoltaic technology. We report on nanometer-scale characterizations of microelectronic …

Currently, monocrystalline silicon has been widely applied in micro-electro-mechanical
systems (MEMSs). It is of importance to reveal the wear behavior of the MEMS and evaluate …