This comprehensive review is concerned with studies regarding ion implanted gallium
nitride (GaN) and focuses on the improvements made in recent years. It is divided into three …

The characteristic effects of do** with impurities such as Si, Ge, Se, O, Mg, Be, and Zn on
the electrical and optical properties of GaN-based materials are reviewed. In addition, the …

The" blue laser" is an exciting new device used in physics. The potential is now being
recognized for its development into a commercial lighting system using about a tenth of the …

We report a comparative study of the emission and absorption spectra of a range of
commercial InGaN light-emitting diodes and high-quality epilayers. A working definition of …

We report the fabrication and characterization of GaN-based double heterostructure light
emitting diodes grown by molecular beam epitaxy on Si (111) substrates. Light emitting …

Infrared spectroscopic ellipsometry (IRSE) over the wave-number range from 300 to 1200
cm− 1 is used to determine the anisotropic room-temperature optical properties of highly …

The growth of high-quality III-nitrides by plasma-assisted molecular beam epitaxy on Si
(111) substrates is addressed. A combination of optimized AlN buffer layers and a two-step …

The advantageous role of 2D electron gas presence at the AlGaN/GaN interface attracts
huge interest in the field of GaN‐based ultraviolet photodetector technology. However, the …

The InxGa1− xN system has electronic band gaps extending from under 1eV to 3.4 eV, and
as such they are used as the active layer in commercially available visible‐light emitting …

We investigated the optical properties of epitaxial n-type ZnO films grown on lattice-matched
ScAlMgO 4 substrates. As the Ga do** concentration increased up to 6× 10 20 cm− 3⁠ …