III-V compound semiconductors (SC) have played a crucial role in the development of
optoelectronic devices for a broad range of applications. Major applications of InP or GaAs …

Research to realize long-wavelength, GaInNAs quantum well lasers has been intense in the
past three years. The results have been very promising considering the relative immaturity …

In this paper we review the basic theoretical aspects as well as some important experimental
results of the band anticrossing effects in highly electronegativity-mismatched …

Highly mismatched semiconductor alloys such as GaN x As 1− x and GaBi x As 1− x have
several novel electronic properties, including a rapid reduction in energy gap with …

Vertical stacking of two-dimensional materials into layered van der Waals heterostructures
has recently been considered as a promising candidate for photocatalytic and optoelectronic …

The concept of below-threshold and above-threshold current injection efficiency of quantum
well (QW) lasers is clarified. The analysis presented here is applied to the current injection …

A brief review on the present knowledge of the electronic properties of the Ga (In) NAs
ternary and quaternary alloys is given mainly from an experimental perspective. The …

In x Ga 1− x As 1− y N y/GaAs single quantum wells emitting at room temperature in the
wavelength range λ=(1.3–1.55) μ m have been studied by photoluminescence (PL). By …

We have investigated the optical transitions in Ga 1− y In y N x As 1− x/GaAs single and
multiple quantum wells using photovoltaic measurements at room temperature. From a …

The many-impurity Anderson model is applied to compound semiconductor alloys in which
metallic anion atoms are partially substituted by highly electronegative atoms at low …