Solar‐blind ultraviolet (UV) photodetectors based on p‐organic/n‐Ga2O3 hybrid
heterojunctions have attracted extensive attention recently. Herein, the multifunctional solar …

oriented ε-Ga 2 O 3 thin films were heteroepitaxially grown on p-Si (111) substrates by
metalorganic chemical vapor deposition (MOCVD). The introduction of Al 2 O 3 buffer layer …

Self-powered ultraviolet (UV) photodetectors play an important role in environmental
monitoring, aerospace and other fields because of the advantage of effective light response …

Abstract ε-Ga2O3 (002) thin films were successfully grown on Si (100) substrate by
metalorganic chemical vapor deposition (MOCVD). The crystal structure, chemical …

In recent years, self-powered ultraviolet photodetectors have attracted significant attention
worldwide, driven by the growing demand in both military and civilian sectors. In this study, β …

Currently, ultraviolet photodetectors attract extensive attention from people all over the world
due to their applications in solar ultraviolet radiation detection, flame detection, ozone …

The built-in electric field associated with a junction, eg, p–n conjunction, can drive the
separation and transport of photogenerated carriers to make self-driven photodetectors, but …

In this study, the solar-blind ultraviolet photodetectors based on p-Si/Ga 2 O 3 and p-Si/SiO
2/n-Ga 2 O 3 heterojunctions were fabricated by metalorganic chemical vapor deposition …

Self-powered deep ultraviolet photodetectors (DUV PDs) are essential in environmental
monitoring, flame detection, missile guidance, aerospace, and other fields. A heterojunction …

A self-powered solar-blind ultraviolet (UV) photodetector (PD) was successfully constructed
on a Ga 2 O 3/Bi 2 WO 6 heterojunction, which was fabricated by spin-coating the …