Conventional FETs, although serving as the backbone of modern electronics, have
encountered fundamental limits in power efficiency due to the Boltzmann limit. Negative …

Junction less field effect transistor, also known as JLFET, is widely regarded as the most
promising candidate that has the potential to replace the more conventional MOSFET used …

This paper represents the analytical modeling of split-gate Dielectric Modulated Junction
Less Transistor (JLT) for label free electrical detection of bio molecules. Some part of the …

In this paper, for the first time, we have investigated the DC and analog/RF performance
metrics of 3 nm gate length (LG) silicon-on-insulator (SOI) FinFET using Hf x Ti 1− x O 2 high …

This manuscript for the first time investigates the effect of Dual Metal on Gate Junctionless
Nanosheet FET (DMG-JL-NSFET) for analog/RF applications. The entire analysis is …

In this article, ultrascaled junctionless (JL) field-effect phototransistors based on carbon
nanotube/nanoribbons with sub-10 nm photogate lengths were computationally assessed …

Design and Performance Optimization of Junctionless Bottom Spacer FinFET for Digital/Analog/RF
Applications at Sub-5nm Technology Node - IOPscience Skip to content IOP Science home …

Silicon (Si) nano-electronics is advancing towards the end of the Moore's Law, as gate
lengths of just a few nanometers have been already reported in state-of-the-art transistors. In …

In this paper, we report the logic performance of CMOS circuits implemented with n-and p-
channel junctionless (JL) FinFETs. A one-to-one comparison of the performance is made …

In this work, TCAD-based investigation of junctionLess (JL) architecture having double gate
(DG) has been performed for visualizing the sensitivity of the device against light intensity …