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Recent advances in In-memory computing: exploring memristor and memtransistor arrays with 2D materials
The conventional computing architecture faces substantial challenges, including high
latency and energy consumption between memory and processing units. In response, in …
latency and energy consumption between memory and processing units. In response, in …
Two-dimensional material-based memristive devices for alternative computing
J Panisilvam, HY Lee, S Byun, D Fan, S Kim - Nano Convergence, 2024 - Springer
Abstract Two-dimensional (2D) materials have emerged as promising building blocks for
next generation memristive devices, owing to their unique electronic, mechanical, and …
next generation memristive devices, owing to their unique electronic, mechanical, and …
Optoelectronic Reconfigurable Logic Gates Based on Two-Dimensional Vertical Field-Effect Transistors
Z Ma, P Yuan, L Li, X Tang, X Li, S Zhang, L Yu… - Nano Letters, 2024 - ACS Publications
Optoelectronic reconfigurable logic gates are promising candidates to meet the
multifunctional and energy-efficient requirements of integrated circuits. However, complex …
multifunctional and energy-efficient requirements of integrated circuits. However, complex …
One-selector-one-resistor integrated memory cells based on two-dimensional heterojunction memory selectors
Selectors are critical components for reducing the sneak path leakage currents in emerging
resistive random-access memory (RRAM) arrays. Two-dimensional (2D) materials provide a …
resistive random-access memory (RRAM) arrays. Two-dimensional (2D) materials provide a …
Subattojoule Electrical Switching in a Two-Dimensional TaSe2 Oxide Device with High Endurance
J Shen, F Tang, C **ong, X Mai, H Wang, X Luo… - Nano Letters, 2025 - ACS Publications
Recent developments in artificial intelligence and the internet-of-things have created great
demand for low-power microelectronic devices. Two-dimensional (2D) electrical switching …
demand for low-power microelectronic devices. Two-dimensional (2D) electrical switching …
van der Waals Photonic Bipolar Junction Transistors Capable of Simultaneously Discerning Wavelength Bands and Dual-Function Chip Application
Z Zhu, L Liu, S Deng, N Xu - ACS nano, 2025 - ACS Publications
The exponential growth of the Internet of Things (IoTs) has led to the widespread
deployment of millions of sensors, crucial for the sensing layer's perception capabilities. In …
deployment of millions of sensors, crucial for the sensing layer's perception capabilities. In …
Natively oxidized 2D NbSe 2 enables ultralow-power electrical switching
In the context of the burgeoning information technology industry, the exponential growth in
data storage and processing requirements has become increasingly evident. Threshold …
data storage and processing requirements has become increasingly evident. Threshold …
Transformation of MoSe2 to MoSe2-xOy via controlled oxidation for high-performance resistive switching
A Khichar, A Hazra - Applied Surface Science, 2025 - Elsevier
The current study shows an improvised resistive switching in oxygenated MoSe 2 (MoSe 2-x
O y) thin film. 2D nanosheets assembled nanoflower morphology of MoSe 2 was …
O y) thin film. 2D nanosheets assembled nanoflower morphology of MoSe 2 was …
Vertical multilayer structure of MoS2 flakes prepared by thermal evaporative deposition
S Zhao, Y Li, M Wei, J Jiao, G Yan, X Liu - Materials Science and …, 2024 - Elsevier
In this investigation, we explore the synthesis of MoS 2 through thermal evaporative
deposition, seeking to uncover the growth dynamics and structural evolution of MoS 2 under …
deposition, seeking to uncover the growth dynamics and structural evolution of MoS 2 under …
Broad band modulation of two-dimensional Mo1-x W x S2 by variational compositions
Z Huang, H Zhao, S Liu, X Liang, Y Chen… - Journal of Physics D …, 2024 - iopscience.iop.org
Precisely tuning bandgap enables tailored design of materials, which is of crucial
importance for optoelectronic devices. Towards this end, ternary Mo 1-x W x S 2 monolayers …
importance for optoelectronic devices. Towards this end, ternary Mo 1-x W x S 2 monolayers …