Recent advances in In-memory computing: exploring memristor and memtransistor arrays with 2D materials

H Zhou, S Li, KW Ang, YW Zhang - Nano-Micro Letters, 2024‏ - Springer
The conventional computing architecture faces substantial challenges, including high
latency and energy consumption between memory and processing units. In response, in …

Two-dimensional material-based memristive devices for alternative computing

J Panisilvam, HY Lee, S Byun, D Fan, S Kim - Nano Convergence, 2024‏ - Springer
Abstract Two-dimensional (2D) materials have emerged as promising building blocks for
next generation memristive devices, owing to their unique electronic, mechanical, and …

Optoelectronic Reconfigurable Logic Gates Based on Two-Dimensional Vertical Field-Effect Transistors

Z Ma, P Yuan, L Li, X Tang, X Li, S Zhang, L Yu… - Nano Letters, 2024‏ - ACS Publications
Optoelectronic reconfigurable logic gates are promising candidates to meet the
multifunctional and energy-efficient requirements of integrated circuits. However, complex …

One-selector-one-resistor integrated memory cells based on two-dimensional heterojunction memory selectors

M Shen, S Shen, Y Jia, Y Liu, P Zhang, M **e, J Wei… - ACS …, 2024‏ - ACS Publications
Selectors are critical components for reducing the sneak path leakage currents in emerging
resistive random-access memory (RRAM) arrays. Two-dimensional (2D) materials provide a …

Subattojoule Electrical Switching in a Two-Dimensional TaSe2 Oxide Device with High Endurance

J Shen, F Tang, C **ong, X Mai, H Wang, X Luo… - Nano Letters, 2025‏ - ACS Publications
Recent developments in artificial intelligence and the internet-of-things have created great
demand for low-power microelectronic devices. Two-dimensional (2D) electrical switching …

van der Waals Photonic Bipolar Junction Transistors Capable of Simultaneously Discerning Wavelength Bands and Dual-Function Chip Application

Z Zhu, L Liu, S Deng, N Xu - ACS nano, 2025‏ - ACS Publications
The exponential growth of the Internet of Things (IoTs) has led to the widespread
deployment of millions of sensors, crucial for the sensing layer's perception capabilities. In …

Natively oxidized 2D NbSe 2 enables ultralow-power electrical switching

C **ong, F Tang, M Xu, J Shen, Y Li, KH Xue… - Journal of Materials …, 2025‏ - pubs.rsc.org
In the context of the burgeoning information technology industry, the exponential growth in
data storage and processing requirements has become increasingly evident. Threshold …

Transformation of MoSe2 to MoSe2-xOy via controlled oxidation for high-performance resistive switching

A Khichar, A Hazra - Applied Surface Science, 2025‏ - Elsevier
The current study shows an improvised resistive switching in oxygenated MoSe 2 (MoSe 2-x
O y) thin film. 2D nanosheets assembled nanoflower morphology of MoSe 2 was …

Vertical multilayer structure of MoS2 flakes prepared by thermal evaporative deposition

S Zhao, Y Li, M Wei, J Jiao, G Yan, X Liu - Materials Science and …, 2024‏ - Elsevier
In this investigation, we explore the synthesis of MoS 2 through thermal evaporative
deposition, seeking to uncover the growth dynamics and structural evolution of MoS 2 under …

Broad band modulation of two-dimensional Mo1-x W x S2 by variational compositions

Z Huang, H Zhao, S Liu, X Liang, Y Chen… - Journal of Physics D …, 2024‏ - iopscience.iop.org
Precisely tuning bandgap enables tailored design of materials, which is of crucial
importance for optoelectronic devices. Towards this end, ternary Mo 1-x W x S 2 monolayers …