Integrated acoustic resonators in commercial fin field-effect transistor technology

J Anderson, Y He, B Bahr, D Weinstein - Nature Electronics, 2022 - nature.com
In radio communication, the growth of beamforming and multiple-input–multiple-output
technologies, which increase transceiver complexity, have led to a drive to reduce the size …

Ultrathin indium oxide thin-film transistors with gigahertz operation frequency

A Charnas, J Anderson, J Zhang… - … on Electron Devices, 2022 - ieeexplore.ieee.org
The remarkable dc performance of ultrathin indium oxide transistors offers a path toward
high-performance back-end-of-line (BEOL) and monolithically integrated logic and memory …

X-band Fin Resonant Body Transistors in 14nm CMOS Technology

J Anderson, Y He, B Bahr, D Weinstein - arxiv preprint arxiv:2107.00608, 2021 - arxiv.org
Here we present the first demonstration and in-depth study of unreleased acoustic
resonators in 14nm FinFET technology in the IEEE X band, which offer a zero-barrier-to …

Atomically Thin Indium Oxide Transistors for Back-end-of-line Applications

AR Charnas - 2022 - hammer.purdue.edu
As thefundamentallimits of two-dimensional (2D) geometric scaling of commercial transistors
are being reached, there is tremendous demand for new materials and process innovations …