Power devices rely on ideal edge termination to suppress the electric field crowding and
avoid premature breakdown before the material's critical field is reached. In this work, a …

Ultra-wide bandgap (UWBG) NiO/β-Ga 2 O 3 p–n junction has recently emerged as a key
building block for emerging electronic and optoelectronic devices. However, the long-term …

Beta-phase gallium oxide (β-Ga 2 O 3) has attracted increasing attention in the field of
power electronic devices due to its ultra-wide bandgap and high Baliga figure-of-merit …

100 μm diameter Schottky and heterojunction vertical Ga 2 O 3 rectifiers were fabricated
on∼ 10 μm thick drift layers grown on 4-in. diameter bulk Ga 2 O 3 substrates. The …

Vertical geometry NiO/Ga 2 O 3 heterojunction (HJ) rectifiers and Ni/Au Schottky rectifiers
fabricated on the same wafer and each with the same diameter (100 μm) were operated at …

The use of the low work function (4.5 eV) tungsten (W) as a rectifying contact was studied to
obtain low on-voltages in W/Ga 2 O 3 Schottky rectifiers and NiO/Ga 2 O 3 heterojunction …

Compact, accurate, and durable thermal neutron detectors utilizing ultra-wide bandgap
semiconductors, such as gallium oxide (Ga 2 O 3) and diamond, hold great promise for the …

In this work, β-Ga 2 O 3 based Schottky barrier diodes (SBDs) with a composite termination
structure of the ZnNiO thin alloy films are reported. β-Ga 2 O 3 SBDs with the junction …

The low thermal conductivity of β-Ga 2 O 3 is a concern for the high-power switching
applications envisaged for this ultra-wide bandgap semiconductor. In this work, we examine …

The on-resistance of Ga 2 O 3 rectifiers with different metal anodes was measured from the
forward current-voltage characteristics. The use of W anode metal produces low on …