Power devices based on wide-bandgap material such as silicon carbide (SiC) can operate
at higher switching speeds, higher voltages, and higher temperatures compared to those …

Online junction temperature (T j) measurement enables robust power converter operations
by providing overtemperature protection and condition monitoring of the power devices. For …

Silicon Carbide MOSFETs have lower switching losses when compared to similarly rated
Silicon IGBT, but exhibit faster switching edges, larger overshoots and increased oscillatory …

Many industrial applications demand high-efficiency and high-power density power
electronic interfaces (PEI), resulting in adoption of emerging wide band gap (WBG) and ultra …

This article presentstwonovel adaptive gate driving concepts for silicon carbide (SiC) metal-
oxide semiconductor field-effect transistors (mosfet s). The first concept is based on the …

This article presents an alternative solution to the short circuit challenges commonly faced
by SiC MOSFETs power transistors. In response to this issue, a dedicated fast CMOS active …

Intelligent gate drive with tunable drivability to achieve optimal switching performance
tradeoff can improve converter operational performance, especially for high-speed wide …

This paper presents a gate-driving strategy for achieving fast switching edges from GaN
HEMT transistors. Switching losses can be reduced by using zero-ohms external gate …

Wide bandgap power transistors such as SiC MOSFETs and HEMTs GaN push furthermore
the classical compromises in power electronics. Briefly, significant gains have been …

This paper overviews the intelligent gate drive for silicon carbide (SiC) devices. Beyond the
traditional isolation and amplification functionalities, the focus of this paper is the advanced …