Since the first report of ferroelectricity in nanoscale HfO2-based thin films in 2011, this silicon-
compatible binary oxide has quickly garnered intense interest in academia and industry, and …

The rapid increase in CPU processing speeds has significantly advanced artificial
intelligence, yet it has also exacerbated the disparity in CPU utilization and data throughput …

Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development
over the last decade, pushing them to the forefront of ultralow-power electronic systems …

HfO 2-based ferroelectric thin films are promising for their application in ferroelectric devices.
Predicting the ultimate magnitude of polarization and understanding its switching …

Zirconium oxide and zirconium-rich Zr x Hf1–x O2 thin films have attracted attention owing to
their switching stability and significant promise for commercial applications such as high …

The rapid development of 5G, big data, and Internet of Things (IoT) technologies is urgently
required for novel non-volatile memory devices with low power consumption, fast read/write …

Doped HfO 2 thin films exhibit robust ferroelectric properties even for nanometric
thicknesses, are compatible with current Si technology, and thus have great potential for the …

As a technically significant dielectric, the physical understanding of ferroelectric hafnia is still
not satisfactory. This is partly due to the limited number of sample materials in the fluorite …

Ferroelectric HfO 2 films are usually polycrystalline and contain a mixture of polar and
nonpolar phases. This challenges the understanding and control of polar phase stabilization …

Abstract Hf (1-x) Y x O 2 (x= 0, 0.10, 0.15, 0.20) epitaxial thin films on YSZ (100) substrate
were prepared at different oxygen (O 2) partial pressures (100, 70, 30, and 10 sccm) by …