Impact of strain engineering and Sn content on GeSn heterostructured nanomaterials for nanoelectronics and photonic devices
Heterostructures based on the GeSn nanocompound have high impact on integrated
photonics devices. The promising feature of GeSn nanostructures is its direct bandgap …
photonics devices. The promising feature of GeSn nanostructures is its direct bandgap …
Recent Progress in Light Polarization Control Schemes for Silicon Integrated Photonics
Light polarization control is a target in photonics, and this paper provides a comprehensive
review of research from various groups on the silicon‐on‐insulator (SOI) platform. It draws …
review of research from various groups on the silicon‐on‐insulator (SOI) platform. It draws …
Metastable group IV allotropes and solid solutions: Nanoparticles and nanowires
In the past decades, group IV nanowires and nanoparticles have been the subject of
extensive research. Beside tremendous progress in morphological control and integration in …
extensive research. Beside tremendous progress in morphological control and integration in …
GeSn-based multiple-quantum-well photodetectors for mid-infrared sensing applications
Silicon (Si)-based mid-infrared (MIR) photonics has promising potential for realizing next-
generation ultra-compact spectroscopic systems for various applications such as label-free …
generation ultra-compact spectroscopic systems for various applications such as label-free …
Tuning the structural and optical properties of GeSiSn/Si multiple quantum wells and GeSn nanostructures using annealing and a faceted surface as a substrate
VA Timofeev, VI Mashanov, AI Nikiforov… - Applied Surface …, 2022 - Elsevier
The optical properties of GeSiSn/Si multiple quantum wells (MQWs) and GeSn
nanostructures are studied in the range of 1.3–4 µm. An annealing at the temperature of …
nanostructures are studied in the range of 1.3–4 µm. An annealing at the temperature of …
Growth of α-Sn on silicon by a reversed β-Sn to α-Sn phase transformation for quantum material integration
Abstract α-Sn and SnGe alloys are attracting attention as a new family of topological
quantum materials. However, bulk α-Sn is thermodynamically stable only below 13∘ C …
quantum materials. However, bulk α-Sn is thermodynamically stable only below 13∘ C …
GeSn/Ge Multiquantum-Well Vertical-Cavity Surface-Emitting pin Structures and Diode Emitters on a 200 mm Ge-on-Insulator Platform
An efficient monolithically integrated light source with complementary metal-oxide-
semiconductor (CMOS) compatibility remains the missing component to enable Si photonics …
semiconductor (CMOS) compatibility remains the missing component to enable Si photonics …
3D Nanoscale Map** of Short‐Range Order in GeSn Alloys
GeSn on Si has attracted much research interest due to its tunable direct bandgap for mid‐
infrared applications. Recently, short‐range order (SRO) in GeSn alloys has been …
infrared applications. Recently, short‐range order (SRO) in GeSn alloys has been …
Design of Mid-Infrared Ge1–x Snx Homojunction pin Photodiodes on Si Substrate
This work reports an optimal design and modeling of a high-performance normal-incidence
GeSn homojunction pin PDs on p-doped silicon (Si) substrate via Intrinsic-Si buffer …
GeSn homojunction pin PDs on p-doped silicon (Si) substrate via Intrinsic-Si buffer …
Carrier lifetime of GeSn measured by spectrally resolved picosecond photoluminescence spectroscopy
B Julsgaard, N Von den Driesch… - Photonics …, 2020 - opg.optica.org
We present an experimental setup capable of time-resolved photoluminescence
spectroscopy for photon energies in the range of 0.51 to 0.56 eV with an instrument time …
spectroscopy for photon energies in the range of 0.51 to 0.56 eV with an instrument time …