An intelligent measurement system for the characterisation of defect centres in semi-
insulating materials is presented. The system utilises two-dimensional analysis of the …

InP is a key semiconductor for the production of optoelectronic and photonic devices. Its
related compounds, such as InGaAsP alloy, have been realized as very important materials …

Fourier transform infrared spectroscopy measurements have been carried out on liquid-
encapsulated Czochralski-grown undoped InP wafers, which reproducibly become semi …

The presence and evolution of traps in undoped semi‐insulating (SI) InP obtained by high
temperature annealing (900° C for 90 h) in poor or rich phosphorus atmosphere has been …

As-grown Fe-doped semiconducting InP wafers (residual carrier concentration⩽ 10 15 cm−
3, estimated iron concentration 5–8× 10 15 cm− 3) were converted to semi-insulating, with …

Positron-lifetime and infrared-absorption spectroscopies have been used to investigate the
compensation defects that render undoped n-type liquid encapsulated Czochralski-grown …

Semi-insulating Fe-doped InP was annealed under different conditions and investigated by
Hall effect, extrinsic photocurrent map**, chemical etching, and optical microscopy. The …

Positron annihilation lifetime (PAL) and photoinduced current transient spectroscopies
(PICTS) have been employed to study the formation of compensation defects in undoped …

A novel technique for preparation of high-resistivity indium phosphide (InP) via post-growth
treatment of undoped n-type wafers is presented. The method includes the deposition of a …

High-resolution photoinduced transient spectroscopy has been applied to study grown-in
defect centres in semi-insulating InP: Fe. The defect structure of crystals characterized by …