Silicon and other inorganic semiconductor nanowires (NWs) have been extensively
investigated in the last two decades for constructing high‐performance nanoelectronics …

In this review, we report several rational designs of nanowire-based solar cells from single
nanowire to nanowire arrays. Two methods of nanowires fabrication: via'top …

The incorporation of metal atoms into silicon nanowires during metal-particle-assisted
growth is a critical issue for various nanowire-based applications. Here we have been able …

Circularly polarized organic light‐emitting diodes (CP‐OLEDs) are ideal candidates to
explore novel applications such as 3D displays, optical storage, and quantum computing …

The ability to program highly modulated morphology upon silicon nanowires (SiNWs) has
been fundamental to explore new phononic and electronic functionalities. We here exploit a …

Ultrathin silicon nanowires (SiNWs), grown via a high-yield and low-cost catalytic approach,
are ideal building blocks for the construction of highly sensitive field-effect transistor (FET) …

Fabricating ultrathin silicon (Si) channels down to critical dimension (CD)< 10 nm, a key
capability to implementing cutting‐edge microelectronics and quantum charge‐qubits, has …

Surface-guided growth has proven to be an efficient approach for the production of nanowire
arrays with controlled orientations and their large-scale integration into electronic and …

Line-shape engineering is a key strategy to endow extra stretchability to 1D silicon
nanowires (SiNWs) grown with self-assembly processes. We here demonstrate a …

Assembling nanoscale building blocks into an orderly network with a programmable layout
and channel designs represents a critical capability to enable a wide range of stretchable …