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High resistivity single crystal silicon ingot and wafer having improved mechanical strength
S Basak, I Peidous, CM Hudson, HM Lee… - US Patent …, 2021 - Google Patents
US11142844B2 - High resistivity single crystal silicon ingot and wafer having improved
mechanical strength - Google Patents US11142844B2 - High resistivity single crystal silicon …
mechanical strength - Google Patents US11142844B2 - High resistivity single crystal silicon …
Methods for growing a nitrogen doped single crystal silicon ingot using continuous Czochralski method
CM Hudson, JW Ryu - US Patent 11,111,597, 2021 - Google Patents
(57) ABSTRACT A method for growing a single crystal silicon ingot by the continuous
Czochralski method is disclosed. The melt depth and thermal conditions are constant during …
Czochralski method is disclosed. The melt depth and thermal conditions are constant during …
Methods for growing a single crystal silicon ingot using continuous Czochralski method
CM Hudson, JW Ryu - US Patent 11,408,090, 2022 - Google Patents
(57) ABSTRACT A method for growing a single crystal silicon ingot by the continuous
Czochralski method is disclosed. The melt depth and thermal conditions are constant during …
Czochralski method is disclosed. The melt depth and thermal conditions are constant during …
Wafer Strength by Control of Uniformity of Edge Bulk Micro Defects
IC Huang, PF Chen, TC Wang - US Patent App. 13/889,515, 2014 - Google Patents
A method is provided for qualifying a semiconductor wafer for subsequent processing, such
as thermal processing. A plurality of locations are defined about a periphery of the …
as thermal processing. A plurality of locations are defined about a periphery of the …
Epitaxial silicon wafer
Y Koike, T Katano, T Ono - US Patent 10,020,203, 2018 - Google Patents
An epitaxial silicon wafer includes a silicon wafer consisting of a COP region in which a
nitrogen concentration is 1x1012–1x1013 atoms/cm", and an epitaxial silicon film formed on …
nitrogen concentration is 1x1012–1x1013 atoms/cm", and an epitaxial silicon film formed on …
Epitaxially coated semiconductor wafer, and method for producing an epitaxially coated semiconductor wafer
T Mueller, M Gehmlich, F Faller - US Patent 10,483,128, 2019 - Google Patents
Epitaxial wafers with a high concentration of BMD nuclei or developed BMDs just below a
denuded zone, and having low surface roughness, are produced by forming an oxyni tride …
denuded zone, and having low surface roughness, are produced by forming an oxyni tride …
Method for manufacturing silicon single crystal wafer and silicon single crystal wafer
WF Qu, S Igawa - US Patent 11,959,191, 2024 - Google Patents
A method for manufacturing a silicon single crystal wafer for a multilayer structure device
including: using a silicon single crystal wafer with oxygen concentration of 12 ppma (JEITA) …
including: using a silicon single crystal wafer with oxygen concentration of 12 ppma (JEITA) …
Single crystal silicon ingot having axial uniformity
CM Hudson, JW Ryu - US Patent 11,111,596, 2021 - Google Patents
US11111596B2 - Single crystal silicon ingot having axial uniformity - Google Patents
US11111596B2 - Single crystal silicon ingot having axial uniformity - Google Patents Single …
US11111596B2 - Single crystal silicon ingot having axial uniformity - Google Patents Single …
Method for qualifying a semiconductor wafer for subsequent processing
IC Huang, PF Chen, TC Wang - US Patent 9,064,823, 2015 - Google Patents
A method is provided for qualifying a semiconductor wafer for subsequent processing, such
as thermal processing. A plurality of locations are defined about a periphery of the …
as thermal processing. A plurality of locations are defined about a periphery of the …
High resistivity single crystal silicon ingot and wafer having improved mechanical strength
S Basak, I Peidous, CM Hudson, HM Lee… - US Patent …, 2023 - Google Patents
(57) ABSTRACT A method for preparing a single crystal silicon ingot and a wafer sliced
therefrom are provided. The ingots and wafers comprise nitrogen at a concentration ofat …
therefrom are provided. The ingots and wafers comprise nitrogen at a concentration ofat …