Quantum dots for photonic quantum information technology

T Heindel, JH Kim, N Gregersen, A Rastelli… - Advances in Optics …, 2023 - opg.optica.org
The generation, manipulation, storage, and detection of single photons play a central role in
emerging photonic quantum information technology. Individual photons serve as flying …

[HTML][HTML] Atomic-scale characterization of droplet epitaxy quantum dots

RSR Gajjela, PM Koenraad - Nanomaterials, 2021 - mdpi.com
The fundamental understanding of quantum dot (QD) growth mechanism is essential to
improve QD based optoelectronic devices. The size, shape, composition, and density of the …

Exciton states in conical quantum dots under applied electric and magnetic fields

C Heyn, A Radu, JA Vinasco, D Laroze… - Optics & Laser …, 2021 - Elsevier
Using the effective mass and parabolic band approximations, and the finite element method,
we calculate the combined effects of axially applied electric and magnetic fields on the …

High harmonic generations triggered by the intense laser field in GaAs/AlxGa1-xAs honeycomb quantum well wires

BO Alaydin, D Altun, O Ozturk, E Ozturk - Materials Today Physics, 2023 - Elsevier
Under constant electric and magnetic fields, the potential profile of the honeycomb quantum
well wire (HQWW) is studied for varying intense laser fields to trigger and optimize high …

Sha** the Emission Directivity of Single Quantum Dots in Dielectric Nanodisks Exploiting Mie Resonances

C Cruciano, D Rocco, A Genco, A Tognazzi… - ACS …, 2025 - ACS Publications
Manipulating the optical landscape of single quantum dots (QDs) is essential to increase the
emitted photon output, enhancing their performance as chemical sensors and single-photon …

Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs (111) A vicinal substrates

A Tuktamyshev, A Fedorov, S Bietti, S Vichi… - Applied Physics …, 2021 - pubs.aip.org
We present self-assembly of InAs/InAlAs quantum dots by the droplet epitaxy technique on
vicinal GaAs (111) A substrates. The small miscut angle, while maintaining the symmetries …

[HTML][HTML] Ordered GaAs quantum dots by droplet epitaxy using in situ direct laser interference patterning

IS Han, YR Wang, M Hopkinson - Applied Physics Letters, 2021 - pubs.aip.org
We report the fabrication of highly ordered arrays of GaAs/AlGaAs quantum dots (QDs) by
droplet epitaxy using in situ direct laser interference patterning. Two-dimensional arrays of …

Study of size, shape, and etch pit formation in InAs/Inp droplet epitaxy quantum dots

RSR Gajjela, NRS Van Venrooij, AR da Cruz… - …, 2022 - iopscience.iop.org
We investigated metal-organic vapor phase epitaxy grown droplet epitaxy (DE) and Stranski–
Krastanov (SK) InAs/InP quantum dots (QDs) by cross-sectional scanning tunneling …

Molecular Beam Epitaxy Growth of Atomically Flat GaAs(111)A by As2

A Tuktamyshev, S Vichi, S Bietti, A Fedorov… - Crystal Growth & …, 2024 - ACS Publications
We analyzed the growth dynamics during the heteroepitaxy on a GaAs (111) A surface
under an As2 flux. The growth is significantly influenced by the Ehrlich–Schwöbel effect …