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Quantum dots for photonic quantum information technology
The generation, manipulation, storage, and detection of single photons play a central role in
emerging photonic quantum information technology. Individual photons serve as flying …
emerging photonic quantum information technology. Individual photons serve as flying …
[HTML][HTML] Atomic-scale characterization of droplet epitaxy quantum dots
The fundamental understanding of quantum dot (QD) growth mechanism is essential to
improve QD based optoelectronic devices. The size, shape, composition, and density of the …
improve QD based optoelectronic devices. The size, shape, composition, and density of the …
Exciton states in conical quantum dots under applied electric and magnetic fields
Using the effective mass and parabolic band approximations, and the finite element method,
we calculate the combined effects of axially applied electric and magnetic fields on the …
we calculate the combined effects of axially applied electric and magnetic fields on the …
High harmonic generations triggered by the intense laser field in GaAs/AlxGa1-xAs honeycomb quantum well wires
Under constant electric and magnetic fields, the potential profile of the honeycomb quantum
well wire (HQWW) is studied for varying intense laser fields to trigger and optimize high …
well wire (HQWW) is studied for varying intense laser fields to trigger and optimize high …
Sha** the Emission Directivity of Single Quantum Dots in Dielectric Nanodisks Exploiting Mie Resonances
Manipulating the optical landscape of single quantum dots (QDs) is essential to increase the
emitted photon output, enhancing their performance as chemical sensors and single-photon …
emitted photon output, enhancing their performance as chemical sensors and single-photon …
Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs (111) A vicinal substrates
We present self-assembly of InAs/InAlAs quantum dots by the droplet epitaxy technique on
vicinal GaAs (111) A substrates. The small miscut angle, while maintaining the symmetries …
vicinal GaAs (111) A substrates. The small miscut angle, while maintaining the symmetries …
[HTML][HTML] Ordered GaAs quantum dots by droplet epitaxy using in situ direct laser interference patterning
We report the fabrication of highly ordered arrays of GaAs/AlGaAs quantum dots (QDs) by
droplet epitaxy using in situ direct laser interference patterning. Two-dimensional arrays of …
droplet epitaxy using in situ direct laser interference patterning. Two-dimensional arrays of …
Study of size, shape, and etch pit formation in InAs/Inp droplet epitaxy quantum dots
We investigated metal-organic vapor phase epitaxy grown droplet epitaxy (DE) and Stranski–
Krastanov (SK) InAs/InP quantum dots (QDs) by cross-sectional scanning tunneling …
Krastanov (SK) InAs/InP quantum dots (QDs) by cross-sectional scanning tunneling …
Effects of random alloy disorder, shape deformation, and substrate misorientation on the exciton lifetime and fine structure splitting of (111) quantum …
Using atomistic, million-atom screened pseudopotential theory together with configuration
interaction, as well as atomically resolved structures based on experimental …
interaction, as well as atomically resolved structures based on experimental …
Molecular Beam Epitaxy Growth of Atomically Flat GaAs(111)A by As2
We analyzed the growth dynamics during the heteroepitaxy on a GaAs (111) A surface
under an As2 flux. The growth is significantly influenced by the Ehrlich–Schwöbel effect …
under an As2 flux. The growth is significantly influenced by the Ehrlich–Schwöbel effect …