Present and new frontiers in materials research by ambient pressure x-ray photoelectron spectroscopy
J Schnadt, J Knudsen… - Journal of Physics …, 2020 - iopscience.iop.org
In this topical review we catagorise all ambient pressure x-ray photoelectron spectroscopy
publications that have appeared between the 1970s and the end of 2018 according to their …
publications that have appeared between the 1970s and the end of 2018 according to their …
Ultralow Ru loading RuO2-TiO2 with strong oxide-support interaction for efficient chlorine evolution and ammonia-nitrogen-elimination
Chlorine evolution reaction (CER) usually requires catalyst with high content of noble metals
for applications at large current density, thus hindering its industrial development. In this …
for applications at large current density, thus hindering its industrial development. In this …
Investigation of (Leaky) ALD TiO2 Protection Layers for Water-Splitting Photoelectrodes
Protective overlayers for light absorbers in photoelectrochemical water-splitting devices
have gained considerable attention in recent years. They stabilize light absorbers which …
have gained considerable attention in recent years. They stabilize light absorbers which …
Bimolecular Reaction Mechanism in the Amido Complex-Based Atomic Layer Deposition of HfO2
G D'acunto, R Tsyshevsky, P Shayesteh… - Chemistry of …, 2023 - ACS Publications
The surface chemistry of the initial growth during the first or first few precursor cycles in
atomic layer deposition is decisive for how the growth proceeds later on and thus for the …
atomic layer deposition is decisive for how the growth proceeds later on and thus for the …
Low-Temperature Route to Direct Amorphous to Rutile Crystallization of TiO2 Thin Films Grown by Atomic Layer Deposition
The physicochemical properties of titanium dioxide (TiO2) depend strongly on the crystal
structure. Compared to anatase, rutile TiO2 has a smaller bandgap, a higher dielectric …
structure. Compared to anatase, rutile TiO2 has a smaller bandgap, a higher dielectric …
Self-cleaning and surface chemical reactions during hafnium dioxide atomic layer deposition on indium arsenide
Atomic layer deposition (ALD) enables the ultrathin high-quality oxide layers that are central
to all modern metal-oxide-semiconductor circuits. Crucial to achieving superior device …
to all modern metal-oxide-semiconductor circuits. Crucial to achieving superior device …
Tunable Ti3+-Mediated Charge Carrier Dynamics of Atomic Layer Deposition-Grown Amorphous TiO2
Amorphous titania (am.-TiO2) has gained wide interest in the field of photocatalysis, thanks
to exceptional disorder-mediated optical and electrical properties compared to crystalline …
to exceptional disorder-mediated optical and electrical properties compared to crystalline …
Atomic Layer Deposition of Hafnium Oxide on InAs: Insight from Time-Resolved in Situ Studies
III–V semiconductors, such as InAs, with an ultrathin high-κ oxide layer have attracted a lot of
interests in recent years as potential next-generation metal–oxide–semiconductor field-effect …
interests in recent years as potential next-generation metal–oxide–semiconductor field-effect …
[PDF][PDF] Upgrade of the SPECIES beamline at the MAX IV Laboratory
The SPECIES beamline has been transferred to the new 1.5 GeV storage ring at the MAX IV
Laboratory. Several improvements have been made to the beamline and its endstations …
Laboratory. Several improvements have been made to the beamline and its endstations …
In situ solid–gas reactivity of nanoscaled metal borides from molten salt synthesis
Metal borides have mostly been studied as bulk materials. The nanoscale provides new
opportunities to investigate the properties of these materials, eg, nanoscale hardening and …
opportunities to investigate the properties of these materials, eg, nanoscale hardening and …