This article reviews the current status of spin dynamics in semiconductors which has
achieved much progress in the recent years due to the fast growing field of semiconductor …

A spin-polarized vertical-cavity surface-emitting laser is demonstrated with electrical spin
injection from an Fe/Al 0.1 Ga 0.9 As Schottky tunnel barrier. Laser operation with a spin …

We have measured the spin injection efficiency and spin lifetime in Co 2 FeSi/n-GaAs lateral
nonlocal spin valves from 20 to 300 K. We observe large (∼ 40 μ V) spin valve signals at …

Magneto-optic Kerr microscopy was employed to investigate the spin-orbit interactions of
electrons traveling in semiconductor quantum wells using surface acoustic waves (SAWs) …

The generation and manipulation of carrier spin polarization in semiconductors solely by
electric fields has garnered significant attention as both an interesting manifestation of spin …

We studied electron density (n) dependence of the extrinsic spin Hall effect in n-doped GaAs
with n raging from 1.8× 10 16 to 3.3× 10 17 cm− 3. By scanning Kerr microscopy …

In bulk n-Ga As epilayers doped near the metal-insulator transition, the authors study the
evolution of electron spin lifetime τ s as a function of applied lateral electrical bias E x⁠. τ s is …

We present quantitative measurements and calculations of the spin–orbit-induced zero
magnetic field spin-splitting in GaAs two-dimensional hole systems. The magneto-resistance …

The control of" flying”(or moving) spin qubits is an important functionality for the manipulation
and exchange of quantum information between remote locations on a chip. Typically, gates …

Electrically generated spin accumulation due to the spin Hall effect is imaged in n-Ga As
channels using Kerr rotation microscopy, focusing on its spatial distribution and time …