Over the years, the development of epitaxial oxides on silicon has been a great
technological challenge. Amorphous silicon oxide layer forms quickly at the interface when …

A method for removing SiO 2 and producing an ordered Si (100) surface using Sr or SrO has
been developed. In this technique, a few monolayers of Sr or SrO are deposited onto the as …

The discovery of ceramic superconductors with critical temperatures that overlap the
operating temperatures of most silicon devices has led to efforts to incorporate these …

Functional oxides on silicon have been the subject of in-depth research for more than 20
years. Much of this research has been focused on the quality of the integration of materials …

We have been successful in obtaining temperature‐stable crystallized thin film of (Zr, Sn)
TiO4. Preferential (111)‐oriented (Zr, Sn) TiO4 thin film was prepared by pulsed laser …

Epitaxial (BaTiO3) 0.5 (CeO2) 0.5 films have been deposited in vertically aligned
nanocomposite form on SrTiO3/TiN buffered Si substrates to achieve high-quality …

Thin film perovskite-type oxide SrTiO 3 has been grown epitaxially on Si (001) substrate by
molecular beam epitaxy. Reflection high energy electron diffraction and x-ray diffraction …

SrTiO3 thin film has been formed on Si (100) substrates with various single buffer layers
such as SrO, CeO2, CaF2, CoSi2 and a multibuffer layer, YSZ/Y2O3/YBa2Cu3O7 by ArF …

Thin films of barium strontium titanate (BST) including BaTiO3 and SrTiO3 end members
were deposited using the metallo-organic decomposition (MOD) technique. Processing …

Diamond crystals of 1 μm mean size were grown on (100) silicon substrates by ArF (193 nm)
laser ablation of graphite in a hydrogen atmosphere with a laser power density of 1.3× 108 …