Turnitin
降AI改写
早检测系统
早降重系统
Turnitin-UK版
万方检测-期刊版
维普编辑部版
Grammarly检测
Paperpass检测
checkpass检测
PaperYY检测
Experimental Demonstration of Operational Z2-FET Memory Matrix
In this letter, a functional Z 2-FET DRAM memory matrix is experimentally demonstrated for
the first time. Word-level operation with simultaneous reading and programming accesses is …
the first time. Word-level operation with simultaneous reading and programming accesses is …
A review of sharp-switching band-modulation devices
S Cristoloveanu, J Lacord, S Martinie, C Navarro… - Micromachines, 2021 - mdpi.com
This paper reviews the recently-developed class of band-modulation devices, born from the
recent progress in fully-depleted silicon-on-insulator (FD-SOI) and other ultrathin-body …
recent progress in fully-depleted silicon-on-insulator (FD-SOI) and other ultrathin-body …
A critique of length and bias dependent constraints for 1T-DRAM operation through RFET
Capacitorless dynamic memory (one transistor dynamic random access memory (1T-
DRAM)) operation in a reconfigurable field effect transistor (RFET) is critically governed by …
DRAM)) operation in a reconfigurable field effect transistor (RFET) is critically governed by …
1-T capacitorless DRAM using laterally bandgap engineered Si-Si: C heterostructure bipolar I-MOS for improved sensing margin and retention time
In this paper, a single transistor (1-T) capacitorless DRAM using laterally bandgap
engineered Si-Si: C heterostructure bipolar I-MOS is investigated using 2-D calibrated …
engineered Si-Si: C heterostructure bipolar I-MOS is investigated using 2-D calibrated …
Simulation Perspectives of Sub-1V Single-Supply Z2-FET 1T-DRAM Cells for Low-Power
With the upcoming Internet of Things (IoT), low-power devices are becoming mainstream
these days. The need for memory elements able to operate at reduced biasing conditions is …
these days. The need for memory elements able to operate at reduced biasing conditions is …
Dynamic Coupling Effect in Z2-FET and Its Application for Photodetection
In this paper, the application of the zero subthreshold swing and zero impact ionization FET
(Z 2-FET) for photodetection is studied with TCAD simulation. Dynamic coupling effect is …
(Z 2-FET) for photodetection is studied with TCAD simulation. Dynamic coupling effect is …
High Retention With -Oxide- Junctionless Architecture for 1T DRAM
MHR Ansari, N Navlakha, JT Lin… - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
This paper reports on the potential benefits of a vertically stacked n-and p-type junctionless
(JL) transistor physically decoupled through an intermediate oxide layer for dynamic …
(JL) transistor physically decoupled through an intermediate oxide layer for dynamic …
[HTML][HTML] Investigation of the Electrical Coupling Effect for Monolithic 3-Dimensional Nonvolatile Memory Consisting of a Feedback Field-Effect Transistor Using TCAD
JH Oh, YS Yu - Micromachines, 2023 - mdpi.com
In this study, the electrical characteristics and electrical coupling effect for monolithic 3-
dimensional nonvolatile memory consisting of a feedback field-effect transistor (M3D-NVM …
dimensional nonvolatile memory consisting of a feedback field-effect transistor (M3D-NVM …
Dependence of latch-up and threshold voltages on channel length in single-gated feedback field-effect transistor
S Woo, S Kim - Semiconductor Science and Technology, 2022 - iopscience.iop.org
This study demonstrates an optimal design method for the channel length in a p+–i–p–n+
structure of feedback field-effect transistors (FBFETs) for next-generation memory devices …
structure of feedback field-effect transistors (FBFETs) for next-generation memory devices …
Investigation of modified 1T DRAM with twin gate tunneling field effect transistor for improved retention characteristics
This paper proposes a one transistor dynamic random access memory (1T DRAM) with
localized partial insulator (LPI) to increase data retention time. Proposed 1T DRAM cell is …
localized partial insulator (LPI) to increase data retention time. Proposed 1T DRAM cell is …