Memristive crossbar arrays for storage and computing applications

H Li, S Wang, X Zhang, W Wang… - Advanced Intelligent …, 2021 - Wiley Online Library
The emergence of memristors with potential applications in data storage and artificial
intelligence has attracted wide attentions. Memristors are assembled in crossbar arrays with …

Notice of violation of IEEE publication principles: overview of selector devices for 3-D stackable cross point RRAM arrays

R Aluguri, TY Tseng - IEEE Journal of the Electron Devices …, 2016 - ieeexplore.ieee.org
Notice of Violation of IEEE Publication Principles" Overview of Selector Devices for 3-D
Stackable Cross Point RRAM Arrays," by Rakesh Aluguri and Tseung-Yuen Tseng in IEEE …

Compact modeling of RRAM devices and its applications in 1T1R and 1S1R array design

PY Chen, S Yu - IEEE Transactions on Electron Devices, 2015 - ieeexplore.ieee.org
In this paper, we present a compact model for metal-oxide-based resistive random access
memory (RRAM) devices with bipolar switching characteristics. The switching mechanism …

One-selector-one-resistor integrated memory cells based on two-dimensional heterojunction memory selectors

M Shen, S Shen, Y Jia, Y Liu, P Zhang, M **e, J Wei… - ACS …, 2024 - ACS Publications
Selectors are critical components for reducing the sneak path leakage currents in emerging
resistive random-access memory (RRAM) arrays. Two-dimensional (2D) materials provide a …

Imaging: In-memory algorithms for image processing

A Haj-Ali, R Ben-Hur, N Wald, R Ronen… - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
Data-intensive applications such as image processing suffer from massive data movement
between memory and processing units. The severe limitations on system performance and …

Towards efficient in-memory computing hardware for quantized neural networks: State-of-the-art, open challenges and perspectives

O Krestinskaya, L Zhang… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
The amount of data processed in the cloud, the development of Internet-of-Things (IoT)
applications, and growing data privacy concerns force the transition from cloud-based to …

Impact of selector devices in analog RRAM-based crossbar arrays for inference and training of neuromorphic system

J Woo, S Yu - IEEE Transactions on Very Large Scale …, 2019 - ieeexplore.ieee.org
The impact of selector devices on the inference and training accuracy of a resistive random
access memory (RRAM)-based neuromorphic computing system is rarely studied. In this …

Cross-point resistive memory: Nonideal properties and solutions

C Wang, D Feng, W Tong, J Liu, Z Li, J Chang… - ACM Transactions on …, 2019 - dl.acm.org
Emerging computational resistive memory is promising to overcome the challenges of
scalability and energy efficiency that DRAM faces and also break through the memory wall …

Electro-Thermal Model of Threshold Switching in TaOx-Based Devices

JM Goodwill, AA Sharma, D Li, JA Bain… - … applied materials & …, 2017 - ACS Publications
Pulsed and quasi-static current–voltage (I–V) characteristics of threshold switching in
TiN/TaO x/TiN crossbar devices were measured as a function of stage temperature (200 …

Design tradeoffs of vertical RRAM-based 3-D cross-point array

PY Chen, Z Li, S Yu - IEEE Transactions on Very Large Scale …, 2016 - ieeexplore.ieee.org
The 3-D integration of resistive switching random access memory (RRAM) array is attractive
for low-cost and high-density nonvolatile memory application. In this paper, the design …