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On the strong coupling of polarization and charge trap** in HfO2/Si-based ferroelectric field-effect transistors: overview of device operation and reliability
Ferroelectric field-effect transistors (FeFETs) have become an attractive technology for
memory and emerging applications on a silicon electronic platform after the discovery of the …
memory and emerging applications on a silicon electronic platform after the discovery of the …
A comprehensive review of advanced trends: From artificial synapses to neuromorphic systems with consideration of non-ideal effects
A neuromorphic system is composed of hardware-based artificial neurons and synaptic
devices, designed to improve the efficiency of neural computations inspired by energy …
devices, designed to improve the efficiency of neural computations inspired by energy …
Direct observation of interface charge behaviors in FeFET by quasi-static split CV and Hall techniques: Revealing FeFET operation
A quasi-static split CV technique is proposed as a novel method to monitor ferroelectric
polarization and charge distribution in FeFETs. In contrast to conventional split CV, which is …
polarization and charge distribution in FeFETs. In contrast to conventional split CV, which is …
Evaluation of polarization characteristics in metal/ferroelectric/semiconductor capacitors and ferroelectric field-effect transistors
In this study, we propose a measurement technique for evaluating ferroelectric polarization
characteristics in ferroelectric field-effect transistors (FeFETs). Different from standard …
characteristics in ferroelectric field-effect transistors (FeFETs). Different from standard …
Experimental evidence of ferroelectricity in calcium doped hafnium oxide thin films
Y Yao, D Zhou, S Li, J Wang, N Sun, F Liu… - Journal of Applied …, 2019 - pubs.aip.org
Ferroelectricity in calcium doped hafnium oxide (Ca: HfO 2) thin films has been
experimentally proved for the first time in this work. All films prepared by chemical solution …
experimentally proved for the first time in this work. All films prepared by chemical solution …
Role of Si Do** in Reducing Coercive Fields for Ferroelectric Switching in
The ferroelectricity of Hf O 2 thin films is technologically useful with various advantages
compared to conventional ferroelectrics. However, the application of orthorhombic Hf O 2 …
compared to conventional ferroelectrics. However, the application of orthorhombic Hf O 2 …
Design and applications of integrated transducers in commercial CMOS technology
Monolithic integration of Microelectromechanical Systems (MEMS) directly within CMOS
technology offers enhanced functionality for integrated circuits (IC) and the potential …
technology offers enhanced functionality for integrated circuits (IC) and the potential …
Effects of post cooling on the remnant polarization and coercive field characteristics of atomic layer deposited Al-doped HfO2 thin films
A study was conducted on how the cooling rate after the phase change heat treatment
required to secure the ferroelectric (FE) properties affects the ferroelectricity of Al-doped HfO …
required to secure the ferroelectric (FE) properties affects the ferroelectricity of Al-doped HfO …
Interface Effects Induced by a Seed Layer on the Phase Stability and Orientation of Ferroelectric Thin Films: A First-Principles Study
C Huang, Y Zhang, S Zheng, Q Yang, M Liao - Physical Review Applied, 2021 - APS
Hf O 2-based films have attracted much attention due to their robust ferroelectric properties
at the nanometer scale and their great potential for data storage. The interface between the …
at the nanometer scale and their great potential for data storage. The interface between the …
Ultra‐Sensitive, Self‐powered, CMOS‐Compatible Near‐Infrared Photodetectors for Wide‐Ranging Applications
Self‐powered near‐infrared (NIR) photodetectors are essential for surveillance systems,
sensing in IoT electronics, facial recognition, health monitoring, optical communication …
sensing in IoT electronics, facial recognition, health monitoring, optical communication …