On the strong coupling of polarization and charge trap** in HfO2/Si-based ferroelectric field-effect transistors: overview of device operation and reliability

K Toprasertpong, M Takenaka, S Takagi - Applied Physics A, 2022 - Springer
Ferroelectric field-effect transistors (FeFETs) have become an attractive technology for
memory and emerging applications on a silicon electronic platform after the discovery of the …

A comprehensive review of advanced trends: From artificial synapses to neuromorphic systems with consideration of non-ideal effects

K Kim, MS Song, H Hwang, S Hwang… - Frontiers in Neuroscience, 2024 - frontiersin.org
A neuromorphic system is composed of hardware-based artificial neurons and synaptic
devices, designed to improve the efficiency of neural computations inspired by energy …

Direct observation of interface charge behaviors in FeFET by quasi-static split CV and Hall techniques: Revealing FeFET operation

K Toprasertpong, M Takenaka… - 2019 IEEE International …, 2019 - ieeexplore.ieee.org
A quasi-static split CV technique is proposed as a novel method to monitor ferroelectric
polarization and charge distribution in FeFETs. In contrast to conventional split CV, which is …

Evaluation of polarization characteristics in metal/ferroelectric/semiconductor capacitors and ferroelectric field-effect transistors

K Toprasertpong, K Tahara, M Takenaka… - Applied Physics …, 2020 - pubs.aip.org
In this study, we propose a measurement technique for evaluating ferroelectric polarization
characteristics in ferroelectric field-effect transistors (FeFETs). Different from standard …

Experimental evidence of ferroelectricity in calcium doped hafnium oxide thin films

Y Yao, D Zhou, S Li, J Wang, N Sun, F Liu… - Journal of Applied …, 2019 - pubs.aip.org
Ferroelectricity in calcium doped hafnium oxide (Ca: HfO 2) thin films has been
experimentally proved for the first time in this work. All films prepared by chemical solution …

Role of Si Do** in Reducing Coercive Fields for Ferroelectric Switching in

H Yang, HJ Lee, J Jo, CH Kim, JH Lee - Physical Review Applied, 2020 - APS
The ferroelectricity of Hf O 2 thin films is technologically useful with various advantages
compared to conventional ferroelectrics. However, the application of orthorhombic Hf O 2 …

Design and applications of integrated transducers in commercial CMOS technology

U Rawat, JD Anderson, D Weinstein - Frontiers in Mechanical …, 2022 - frontiersin.org
Monolithic integration of Microelectromechanical Systems (MEMS) directly within CMOS
technology offers enhanced functionality for integrated circuits (IC) and the potential …

Effects of post cooling on the remnant polarization and coercive field characteristics of atomic layer deposited Al-doped HfO2 thin films

B Ku, YR Jeon, M Choi, C Chung, C Choi - Applied Surface Science, 2022 - Elsevier
A study was conducted on how the cooling rate after the phase change heat treatment
required to secure the ferroelectric (FE) properties affects the ferroelectricity of Al-doped HfO …

Interface Effects Induced by a Seed Layer on the Phase Stability and Orientation of Ferroelectric Thin Films: A First-Principles Study

C Huang, Y Zhang, S Zheng, Q Yang, M Liao - Physical Review Applied, 2021 - APS
Hf O 2-based films have attracted much attention due to their robust ferroelectric properties
at the nanometer scale and their great potential for data storage. The interface between the …

Ultra‐Sensitive, Self‐powered, CMOS‐Compatible Near‐Infrared Photodetectors for Wide‐Ranging Applications

NE Silva, AR Jayakrishnan, A Kaim… - Advanced Functional …, 2024 - Wiley Online Library
Self‐powered near‐infrared (NIR) photodetectors are essential for surveillance systems,
sensing in IoT electronics, facial recognition, health monitoring, optical communication …