Realization of memristor‐based neuromorphic hardware system is important to achieve
energy efficient bigdata processing and artificial intelligence in integrated device system …

Neuromorphic engineering is a promising technology for develo** new computing
systems owing to the low-power operation and the massive parallelism similarity to the …

Controlled resistive switching behavior has shown potential for brain-inspired functionalities
and feasibility for multi-functional photelectric sensors. For the first time, bias-polarity …

In this paper, a sensor with memristor electrode geometry (Pt/TiO 2/Pt) was fabricated by a
simple and cost-effective method yielding 10 6 orders of resistance change with short …

A bio-realistic artificial synapse integrated with a nanogenerator (NG), which can be used in
neuromorphic systems, is demonstrated for self-powered biomedical devices in this study …

In this study, we report the Poole-Frenkel induced threshold switching characteristics of
niobium dioxide (NbO 2) films by tuning oxygen stoichiometry. Similar to correlated oxides …

Magnéli phases of titanium dioxide (such as Ti4O7, Ti5O9, etc.) provide electronic
properties, namely, a stable metallic behavior at room temperature. In this manuscript, we …

The insertion of an HfO 2-y layer within TiO 2-x/HfO 2-y/TiO 2-x resistive random access
memory (RRAM) yields in low set power of 50 nW (10 nA at 5 V), low reset power of 3 nW (1 …

The operating principle of resistive random access memories (RRAMs) relies on the
distribution of ionic species and their influence on the electron transport. Taking into account …

Metal oxide nanostructure hybrid materials have garnered focused attention for next-
generation memory-based devices. TiO2 nanostructure hybrids dwell in that league of …