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Measurement and control of size and density of type-II ZnTe/ZnSe submonolayer quantum dots grown by migration enhanced epitaxy
For practical applications of self-assembled semiconductor quantum dots (QDs), it is
important to control their densities and sizes, however these parameters are difficult to …
important to control their densities and sizes, however these parameters are difficult to …
[HTML][HTML] Long spin-flip time and large Zeeman splitting of holes in type-II ZnTe/ZnSe submonolayer quantum dots
The Zeeman splitting and degree of circular polarization (DCP) of photoluminescence (PL)
from type-II submonolayer ZnTe/ZnSe quantum dots (QDs) have been investigated in …
from type-II submonolayer ZnTe/ZnSe quantum dots (QDs) have been investigated in …
Decoherence in semiconductor nanostructures with type-II band alignment: All-optical measurements using Aharonov-Bohm excitons
We examine the temperature dependence of the visibility of the excitonic Aharonov-Bohm
peak in type-II quantum dots. We obtain a functional temperature dependence that is similar …
peak in type-II quantum dots. We obtain a functional temperature dependence that is similar …
[HTML][HTML] Determination of shape anisotropy in embedded low contrast submonolayer quantum dot structures
We describe a procedure for the morphological characterization of hard-to-image
submonolayer quantum dot structures. This procedure employs high resolution x-ray …
submonolayer quantum dot structures. This procedure employs high resolution x-ray …
[HTML][HTML] Optical anisotropy in type-II ZnTe/ZnSe submonolayer quantum dots
Linearly polarized photoluminescence is observed for type-II ZnTe/ZnSe submonolayer
quantum dots (QDs). The comparison of spectral dependence of the degree of linear …
quantum dots (QDs). The comparison of spectral dependence of the degree of linear …
[KNIHA][B] Growth and Characterization of Type-II Submonolayer ZnCdTe/ZnCdSe Quantum Dot Superlattices for Efficient Intermediate Band Solar Cells
S Dhomkar - 2015 - search.proquest.com
In this thesis, we discuss the growth procedure and the characterization results obtained for
epitaxially grown submonolayer type-II quantum dot superlattices made of II-VI …
epitaxially grown submonolayer type-II quantum dot superlattices made of II-VI …
[KNIHA][B] Properties of Type-II ZnTe/ZnSe Submonolayer Quantum Dots Studied via Excitonic Aharonov-Bohm Effect and Polarized Optical Spectroscopy
H Ji - 2016 - search.proquest.com
In this thesis I develop understanding of the fundamental physical and material properties of
type-II ZnTe/ZnSe submonolayer quantum dots (QDs), grown via combination of molecular …
type-II ZnTe/ZnSe submonolayer quantum dots (QDs), grown via combination of molecular …
Photoluminescence Properties of Novel III-V Semiconductor Systems
S Gandan - 2021 - sword.cit.ie
Perturbation of the inherent radiation equilibrium in solids by an external energy could
engender an emission of the superfluous energy as electromagnetic radiation, or …
engender an emission of the superfluous energy as electromagnetic radiation, or …
Estimation of the lateral dimensions of epitaxial submonolayer CdSe/ZnSe quantum dots
JC Basilio-Ortiz, F Sutara… - Nanotechnology, 2020 - iopscience.iop.org
CdSe fractional monolayer quantum dots (FMQDs) embedded in a ZnSe matrix were
produced by atomic layer epitaxy with a nominal coverage of 0.5 monolayer. They have a …
produced by atomic layer epitaxy with a nominal coverage of 0.5 monolayer. They have a …
[PDF][PDF] Crecimiento epitaxial y caracterización del espectro excitónico de puntos cuánticos de submonocapas atómicas de CdSe con barreras de ZnSe
B Ortiz, J Carlos - 2020 - repositorio.cinvestav.mx
Los semiconductores basados en compuestos II-VI son de gran interés debido a la energía
de su banda prohibida que cubre del infrarrojo al ultravioleta. Dentro de esta familia de …
de su banda prohibida que cubre del infrarrojo al ultravioleta. Dentro de esta familia de …