Light emitting devices based on quantum well-dots

MV Maximov, AM Nadtochiy, SA Mintairov… - Applied Sciences, 2020 - mdpi.com
We review epitaxial formation, basic properties, and device applications of a novel type of
nanostructures of mixed (0D/2D) dimensionality that we refer to as quantum well-dots …

Physics and technology of Terahertz quantum cascade lasers

MS Vitiello, A Tredicucci - Advances in physics: X, 2021 - Taylor & Francis
Even though already in the seventies, right after the invention of the quantum cascade laser
(QCL) concept, it was argued that this device could be operated in the THz (far-infrared) …

Atomistic origin of lattice softness and its impact on structural and carrier dynamics in three dimensional perovskites

Z Guo, J Wang, WJ Yin - Energy & Environmental Science, 2022 - pubs.rsc.org
The soft lattices of lead-halide perovskites (LHPs) are responsible for their unique material
properties, including polaron formation, defect tolerance, anharmonic vibration, and large …

Highly Spin-Polarized Room-Temperature Tunnel Injector<? format?> for Semiconductor Spintronics using MgO (100)

X Jiang, R Wang, RM Shelby, RM Macfarlane… - Physical Review Letters, 2005 - APS
The spin polarization of current injected into GaAs from a C o F e/M g O (100) tunnel injector
is inferred from the electroluminescence polarization from G a A s/A l G a A s quantum well …

2D behaviors of excitons in cesium lead halide perovskite nanoplatelets

J Li, L Luo, H Huang, C Ma, Z Ye… - The Journal of Physical …, 2017 - ACS Publications
Fundamental to understanding and predicting the optoelectronic properties of
semiconductors is the basic parameters of excitons such as oscillator strength and exciton …

Exciton dynamics in GaAs quantum wells under resonant excitation

A Vinattieri, J Shah, TC Damen, DS Kim, LN Pfeiffer… - Physical Review B, 1994 - APS
We present a comprehensive investigation of the dynamics of resonantly excited nonthermal
excitons in high-quality GaAs/Al x Ga 1− x As multiple-quantum-well structures on …

A photodetector based on p-Si/n-ZnO nanotube heterojunctions with high ultraviolet responsivity

TH Flemban, MA Haque, I Ajia, N Alwadai… - … applied materials & …, 2017 - ACS Publications
Enhanced ultraviolet (UV) photodetectors (PDs) with high responsivity comparable to that of
visible and infrared photodetectors are needed for commercial applications. n-Type ZnO …

Direct comparison of recombination dynamics in cubic and hexagonal GaN/AlN quantum dots

J Simon, NT Pelekanos, C Adelmann… - Physical Review B, 2003 - APS
We report on time-integrated and-resolved photoluminescence (PL) data on self-assembled
GaN quantum dots (QD's) embedded in AlN, in both cubic [zinc-blende (ZB)] and hexagonal …

Steady-state carrier escape from single quantum wells

J Nelson, M Paxman, KWJ Barnham… - IEEE Journal of …, 1993 - ieeexplore.ieee.org
The authors have studied the variation in DC photocurrent with bias and temperature from
GaAs-Al/sub x/Ga/sub 1-x/As single quantum wells embedded in pin diodes. They found that …

Theory of spontaneous-emission lifetime of Wannier excitons in mesoscopic semiconductor quantum disks

M Sugawara - Physical Review B, 1995 - APS
A theoretical study of the spontaneous-emission lifetime of Wannier excitons in mesoscopic
quantum disks is presented. We begin by introducing our experiments on the spontaneous …