Roadmap on ferroelectric hafnia-and zirconia-based materials and devices
Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development
over the last decade, pushing them to the forefront of ultralow-power electronic systems …
over the last decade, pushing them to the forefront of ultralow-power electronic systems …
High-endurance ferroelectric (La, Y) and (La, Gd) Co-doped hafnium zirconate grown by atomic layer deposition
Thin films based on stoichiometric hafnium zirconate doped and co-doped with La, Gd,
and/or Y have been grown by atomic layer deposition on TiN electrodes. The resulting TiN …
and/or Y have been grown by atomic layer deposition on TiN electrodes. The resulting TiN …
Reduced fatigue and leakage of ferroelectric TiN/Hf0. 5Zr0. 5O2/TiN capacitors by thin alumina interlayers at the top or bottom interface
Abstract Hf 0.5 Zr 0.5 O 2 (HZO) thin films are promising candidates for non-volatile memory
and other related applications due to their demonstrated ferroelectricity at the nanoscale and …
and other related applications due to their demonstrated ferroelectricity at the nanoscale and …
[HTML][HTML] Synergetic contributions of chemical do** and epitaxial stress to polarization in ferroelectric HfO2 films
Literature is rich on the study of different strategies to tailor ferroelectric properties of HfO 2.
Among them, chemical do** is the most studied. La doped HfO 2 films have attracted …
Among them, chemical do** is the most studied. La doped HfO 2 films have attracted …
Improved polarization and endurance in ferroelectric Hf 0.5 Zr 0.5 O 2 films on SrTiO 3 (110)
The metastable orthorhombic phase of Hf0. 5Zr0. 5O2 (HZO) can be stabilized in thin films
on La0. 67Sr0. 33MnO3 (LSMO) buffered (001)-oriented SrTiO3 (STO) by intriguing epitaxy …
on La0. 67Sr0. 33MnO3 (LSMO) buffered (001)-oriented SrTiO3 (STO) by intriguing epitaxy …
[HTML][HTML] Ferroelectricity and negative piezoelectric coefficient in orthorhombic phase pure ZrO2 thin films
A new approach for epitaxial stabilisation of ferroelectric orthorhombic (o-) ZrO 2 films with
negative piezoelectric coefficient in∼ 8nm thick films grown by ion-beam sputtering is …
negative piezoelectric coefficient in∼ 8nm thick films grown by ion-beam sputtering is …
Anisotropic Strain‐Mediated Symmetry Engineering and Enhancement of Ferroelectricity in Hf0.5Zr0.5O2/La0.67Sr0.33MnO3 Heterostructures
Hafnium‐based binary oxides have attracted considerable attention due to their robust
ferroelectricity at the nanoscale and compatibility with silicon‐based electronic technologies …
ferroelectricity at the nanoscale and compatibility with silicon‐based electronic technologies …
Ferroelectric Hf 0.5 Zr 0.5 O 2 films with improved endurance obtained through low temperature epitaxial growth on seed layers
Crystallization temperature is a critical parameter in the stabilization of the metastable
ferroelectric phase of HfO2. The optimal crystallization temperature used for polycrystalline …
ferroelectric phase of HfO2. The optimal crystallization temperature used for polycrystalline …
Ferroelastically protected reversible orthorhombic to monoclinic-like phase transition in ZrO2 nanocrystals
Robust ferroelectricity in nanoscale fluorite oxide-based thin films enables promising
applications in silicon-compatible non-volatile memories and logic devices. However, the …
applications in silicon-compatible non-volatile memories and logic devices. However, the …
Improved Polarization‐Retention‐Endurance in Hf0.5Zr0.5O2 Films by ZrO2 Cap** via Electrostatic Effects
Ferroelectric hafnia is one of the most promising materials for next generation of non‐volatile
memory devices. Several strategies have demonstrated to be of interest to improve its …
memory devices. Several strategies have demonstrated to be of interest to improve its …