Quantum dots for photonic quantum information technology
The generation, manipulation, storage, and detection of single photons play a central role in
emerging photonic quantum information technology. Individual photons serve as flying …
emerging photonic quantum information technology. Individual photons serve as flying …
Engineering atomic and molecular nanostructures at surfaces
The fabrication methods of the microelectronics industry have been refined to produce ever
smaller devices, but will soon reach their fundamental limits. A promising alternative route to …
smaller devices, but will soon reach their fundamental limits. A promising alternative route to …
Droplet epitaxy of semiconductor nanostructures for quantum photonic devices
The long dreamed 'quantum internet'would consist of a network of quantum nodes (solid-
state or atomic systems) linked by flying qubits, naturally based on photons, travelling over …
state or atomic systems) linked by flying qubits, naturally based on photons, travelling over …
Advanced quantum dot configurations
S Kiravittaya, A Rastelli… - Reports on Progress in …, 2009 - iopscience.iop.org
We present an overview on approaches currently employed to fabricate advanced quantum
dot configurations by epitaxial growth. Widely investigated self-assembled quantum dots, ie …
dot configurations by epitaxial growth. Widely investigated self-assembled quantum dots, ie …
Interplay between Thermodynamics and Kinetics in the Cap** <?format ?>of Quantum Dots
G Costantini, A Rastelli, C Manzano, P Acosta-Diaz… - Physical review …, 2006 - APS
A microscopic picture for the GaAs overgrowth of self-organized InAs/GaAs (001) quantum
dots is developed. Scanning tunneling microscopy measurements reveal two cap** …
dots is developed. Scanning tunneling microscopy measurements reveal two cap** …
Few-particle energies versus geometry and composition of self-organized quantum dots
Energies of exciton, biexciton, and charged excitons for a large variety of realistic quantum
dots are calculated using the configuration-interaction model in conjunction with eight-band …
dots are calculated using the configuration-interaction model in conjunction with eight-band …
Key role of the wetting layer in revealing the hidden path of Ge/Si (001) Stranski-Krastanow growth onset
The commonly accepted Stranski-Krastanow model, according to which island formation
occurs on top of a wetting layer (WL) of a certain thickness, predicts for the morphological …
occurs on top of a wetting layer (WL) of a certain thickness, predicts for the morphological …
Coarsening, mixing, and motion: the complex evolution of epitaxial islands
During heteroepitaxy, misfit strain causes nanoscale islands to form spontaneously, as “self-
assembled quantum dots.” The growth and evolution of these islands are remarkably …
assembled quantum dots.” The growth and evolution of these islands are remarkably …
Shape transition during epitaxial growth of quantum dots on : Theory and experiment
P Kratzer, QKK Liu, P Acosta-Diaz, C Manzano… - Physical Review B …, 2006 - APS
For heteroepitaxial growth of InAs islands on GaAs (001), a transition of shapes is observed
experimentally by scanning-tunneling microscopy and analyzed theoretically in terms of the …
experimentally by scanning-tunneling microscopy and analyzed theoretically in terms of the …
Analytic many-body potential for InAs/GaAs surfaces and nanostructures: Formation energy of InAs quantum dots
A parametrization of the Abell–Tersoff potential for In, Ga, As, InAs, and GaAs is presented
by using both experimental data and results from density-functional calculations as input …
by using both experimental data and results from density-functional calculations as input …