Charge dynamics and spin blockade in a hybrid double quantum dot in silicon

M Urdampilleta, A Chatterjee, CC Lo, T Kobayashi… - Physical Review X, 2015 - APS
Electron spin qubits in silicon, whether in quantum dots or in donor atoms, have long been
considered attractive qubits for the implementation of a quantum computer because of …

Single donor electronics and quantum functionalities with advanced CMOS technology

X Jehl, YM Niquet, M Sanquer - Journal of Physics: Condensed …, 2016 - iopscience.iop.org
Recent progresses in quantum dots technology allow fundamental studies of single donors
in various semiconductor nanostructures. For the prospect of applications figures of merits …

Two-electron states of a group-V donor in silicon from atomistic full configuration interactions

A Tankasala, J Salfi, J Bocquel, B Voisin, M Usman… - Physical Review B, 2018 - APS
Two-electron states bound to donors in silicon are important for both two-qubit gates and
spin readout. We present a full configuration interaction technique in the atomistic tight …

Spatially resolved resonant tunneling on single atoms in silicon

B Voisin, J Salfi, J Bocquel, R Rahman… - Journal of Physics …, 2015 - iopscience.iop.org
The ability to control single dopants in solid-state devices has opened the way towards
reliable quantum computation schemes. In this perspective it is essential to understand the …

1950-2022: A History of Nanotechnology into Physical and Mathematical Relationship

A Durlo - 2023 - theses.hal.science
My Ph. D thesis brings together the highlights of the History of Nanotechnology (1950-2022)
to the present day. As this time-span is well documented, I based my three-year long …

Electric-field-assisted formation of an interfacial double-donor molecule in silicon nano-transistors

A Samanta, D Moraru, T Mizuno, M Tabe - Scientific Reports, 2015 - nature.com
Control of coupling of dopant atoms in silicon nanostructures is a fundamental challenge for
dopant-based applications. However, it is difficult to find systems of only a few dopants that …

Size and temperature dependence of the electron–phonon scattering by donors in nanowire transistors

M Bescond, H Carrillo-Nuñez, S Berrada… - Solid-State …, 2016 - Elsevier
Due to the constant size reduction, single-donor-based nanowire transistors receive an
increasing interest from the semi-conductor industry. In this work we theoretically investigate …

Dopant-controlled single-electron pum** through a metallic island

T Wenz, F Hohls, X Jehl, M Sanquer, S Barraud… - Applied Physics …, 2016 - pubs.aip.org
We investigate a hybrid metallic island/single dopant electron pump based on fully depleted
silicon-on-insulator technology. Electron transfer between the central metallic island and the …

The coupled atom transistor

X Jehl, B Voisin, B Roche… - Journal of Physics …, 2015 - iopscience.iop.org
We describe the first implementation of a coupled atom transistor where two shallow donors
(P or As) are implanted in a nanoscale silicon nanowire and their electronic levels are …

Engineering multi-electron interactions for quantum logic in silicon

A Tankasala - 2017 - search.proquest.com
Solid-state platforms are promising candidates for future quantum computers. Recent
advances in solid-state nano-electronics have enabled precise control of individual atoms at …