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Quantum cascade lasers grown by MOCVD
Y Sun, G Cui, K Guo, J Zhang, N Zhuo… - Journal of …, 2023 - iopscience.iop.org
Sharing the advantages of high optical power, high efficiency and design flexibility in a
compact size, quantum cascade lasers (QCLs) are excellent mid-to-far infrared laser …
compact size, quantum cascade lasers (QCLs) are excellent mid-to-far infrared laser …
Room-temperature continuous-wave quantum cascade lasers grown by MOCVD without lateral regrowth
We report on room-temperature continuous-wave (CW) operation of/spl lambda//spl sim/8.2
μm quantum cascade lasers grown by metal-organic chemical vapor deposition without …
μm quantum cascade lasers grown by metal-organic chemical vapor deposition without …
[HTML][HTML] Progress in mid-infrared optoelectronics for high-speed free-space data throughput
Free-space laser communications offer a promising alternative for broadband data
transmission in places where fiber optics are impractical. This technology, particularly …
transmission in places where fiber optics are impractical. This technology, particularly …
MOVPE growth of LWIR AlInAs/GaInAs/InP quantum cascade lasers: Impact of growth and material quality on laser performance
The quality of epitaxial layers in quantum cascade lasers (QCLs) has a primary impact on
QCL performance, and establishing correlations between epitaxial growth and materials …
QCL performance, and establishing correlations between epitaxial growth and materials …
Single-mode surface-emitting quantum-cascade lasers
C Pflügl, M Austerer, W Schrenk, S Golka… - Applied Physics …, 2005 - pubs.aip.org
We present high-power surface-emitting second-order distributed feedback quantum-
cascade lasers in GaAs and InP material systems. The GaAs device, grown by molecular …
cascade lasers in GaAs and InP material systems. The GaAs device, grown by molecular …
Terahertz quantum cascade laser considering compositional interdiffusion effect
This study presents an experimental demonstration of the crucial role of compositional
interdiffusion at interfaces in GaAs/AlGaAs alternating superlattices for develo** the …
interdiffusion at interfaces in GaAs/AlGaAs alternating superlattices for develo** the …
[PDF][PDF] 量子级联激光器研究进展
刘峰奇, 张锦川, 刘俊岐, 卓宁, 王利军… - Chinese Journal of …, 2020 - researching.cn
摘要因量子级联激光器的工作波长可覆盖红外到太赫兹波段, 在大气污染检测, 工业污染监控,
医学诊断, 毒品及生化危险品灵敏检测, 自由空间通信等领域具有广泛的应用前景. 从1994 …
医学诊断, 毒品及生化危险品灵敏检测, 自由空间通信等领域具有广泛的应用前景. 从1994 …
AlGaAs/GaAs/AlGaAs quantum wells as a sensitive tool for the MOVPE reactor environment
We present in this work a simple quantum well (QW) structure consisting of GaAs wells with
AlGaAs barriers as a probe for measuring the performance of arsine purifiers within a …
AlGaAs barriers as a probe for measuring the performance of arsine purifiers within a …
[HTML][HTML] Advanced AlGaAs/GaAs heterostructures grown by MOVPE
MA Ladugin, IV Yarotskaya, TA Bagaev, KY Telegin… - Crystals, 2019 - mdpi.com
AlGaAs/GaAs heterostructures are the base of many semiconductor devices. The fabrication
of new types of devices demands heterostructures with special features, such as large total …
of new types of devices demands heterostructures with special features, such as large total …
Sensitivity of heterointerfaces on emission wavelength of quantum cascade lasers
The measured emission wavelengths of AlInAs/GaInAs/InP quantum cascade lasers (QCLs)
grown by metal organic vapor phase epitaxy (MOVPE) have been reported to be~ 0.5–1 µm …
grown by metal organic vapor phase epitaxy (MOVPE) have been reported to be~ 0.5–1 µm …