We present a comprehensive, up-to-date compilation of band parameters for the
technologically important III–V zinc blende and wurtzite compound semiconductors: GaAs …

This article comprehensively reviews the growth of III–V antimony-based semiconductor
materials using metal-organic chemical vapor deposition (MOCVD). It does this by first …

This new edition of Infrared and Terahertz Detectors provides a comprehensive overview of
infrared and terahertz detector technology, from fundamental science to materials and …

Infrared Detectors provides comprehensive coverage of this important aspect of infrared
technology, including details of recent research efforts directed toward improving the …

Photoconductors using vertical arrays of InAs/InAs1–x Sb x nanowires with varying Sb
composition x have been fabricated and characterized. The spectrally resolved …

Superconductor proximitized one-dimensional semiconductor nanowires with strong spin-
orbit interaction (SOI) are, at this time, the most promising candidates for the realization of …

The absorption spectra for the antimonide-based type-II superlattices (SLs) for detection in
the long-wave infrared (LWIR) are calculated and compared to the measured data for SLs …

The band gap energy of the alloy InAsSb has been studied as a function of composition with
special emphasis on minimization of strain-induced artifacts. The films were grown by …

For many years, it was believed that when two isovalent semiconductors are mixed, they will
phase-separate (like oil and water) at low temperature, they will form a solid solution (like …

Unrelaxed InAs 1− x Sb x layers with lattice constants up to 2.1% larger than that of GaSb
substrates were grown by molecular beam epitaxy on GaInSb and AlGaInSb compositionally …