Relationship between 4H-SiC∕ SiO2 transition layer thickness and mobility
The interfacial region between silicon carbide (SiC) and its native oxide contains a high
density of interfacial traps, which is considered a major problem leading to a lower mobility …
density of interfacial traps, which is considered a major problem leading to a lower mobility …
A new approach to electrically detected magnetic resonance: Spin-dependent transient spectroscopy
Electrically detected magnetic resonance (EDMR) is arguably the most sensitive method
available to study electrically active point defects in semiconductor devices. Most EDMR …
available to study electrically active point defects in semiconductor devices. Most EDMR …
Wafer-level electrically detected magnetic resonance: Magnetic resonance in a probing station
We report on a novel semiconductor reliability technique that incorporates an electrically
detected magnetic resonance (EDMR) spectrometer within a conventional semiconductor …
detected magnetic resonance (EDMR) spectrometer within a conventional semiconductor …
Carrier generation lifetimes in 4H-SiC MOS capacitors
MJ Marinella, DK Schroder, G Chung… - IEEE transactions on …, 2010 - ieeexplore.ieee.org
The field of SiC electronics has progressed rapidly in recent years, but certain electronic
properties remain poorly understood. For example, a consensus has not been reached as to …
properties remain poorly understood. For example, a consensus has not been reached as to …
[HTML][HTML] Slow-and rapid-scan frequency-swept electrically detected magnetic resonance of MOSFETs with a non-resonant microwave probe within a semiconductor …
We report on a novel electron paramagnetic resonance (EPR) technique that merges
electrically detected magnetic resonance (EDMR) with a conventional semiconductor wafer …
electrically detected magnetic resonance (EDMR) with a conventional semiconductor wafer …
A multifield and frequency electrically detected magnetic resonance study of atomic-scale defects in gamma irradiated modern MOS integrated circuitry
The role of specific atomic-scale defects involved in total ionizing dose radiation in the metal-
oxide-semiconductor field-effect transistors of the 1980s and 1990s was identified in large …
oxide-semiconductor field-effect transistors of the 1980s and 1990s was identified in large …
Direct observation of lifetime killing defects in 4H SiC epitaxial layers through spin dependent recombination in bipolar junction transistors
We have identified a magnetic resonance spectrum associated with minority carrier lifetime
killing defects in device quality 4 H SiC through magnetic resonance measurements in …
killing defects in device quality 4 H SiC through magnetic resonance measurements in …
[HTML][HTML] Apparatus for electrically detected electron nuclear double resonance in solid state electronic devices
BR Manning, RJ Waskiewicz, DJ McCrory… - Review of Scientific …, 2019 - pubs.aip.org
BACKGROUND In EPR measurements, one observes the response of paramagnetic centers
to a large magnetic field in combination with an oscillating magnetic field. The magnetic field …
to a large magnetic field in combination with an oscillating magnetic field. The magnetic field …
Real time exponentially weighted recursive least squares adaptive signal averaging for enhancing the sensitivity of continuous wave magnetic resonance
This study involves the use of adaptive signal processing techniques to improve the
sensitivity of continuous wave electrically detected magnetic resonance. The approach …
sensitivity of continuous wave electrically detected magnetic resonance. The approach …
[HTML][HTML] Electrically detected electron nuclear double resonance in 4H-SiC bipolar junction transistors
RJ Waskiewicz, BR Manning, DJ McCrory… - Journal of Applied …, 2019 - pubs.aip.org
We demonstrate high signal-to-noise electrically detected electron-nuclear double
resonance measurements on fully processed bipolar junction transistors at room …
resonance measurements on fully processed bipolar junction transistors at room …