Ferromagnetic resonance in Ga1− xMnxAs dilute magnetic semiconductors
We review the phenomenon of ferromagnetic resonance (FMR) in ferromagnetic (FM) Ga 1−
x Mn x As semiconductor alloys and their heterostructures in thin film form. We will show that …
x Mn x As semiconductor alloys and their heterostructures in thin film form. We will show that …
[HTML][HTML] Ferromagnetic semiconductor GaMnAs
The newly-develo** spintronics technology requires materials that allow control of both
the charge and the spin degrees of freedom of the charge carriers. Ferromagnetic …
the charge and the spin degrees of freedom of the charge carriers. Ferromagnetic …
Perpendicular magnetization reversal, magnetic anisotropy, multistep spin switching, and domain nucleation and expansion in Ga1− xMnxAs films
We present a comprehensive study of the reversal process of perpendicular magnetization
in thin layers of the ferromagnetic semiconductor Ga 1− x Mn x As. For this investigation we …
in thin layers of the ferromagnetic semiconductor Ga 1− x Mn x As. For this investigation we …
Giant magnetoresistance and long-range antiferromagnetic interlayer exchange coupling in (Ga, Mn) As/GaAs: Be multilayers
We report the observation of the giant magnetoresistance effect in semiconductor-based
GaMnAs/GaAs: Be multilayers. Clear transitions between low-field-high-resistance and high …
GaMnAs/GaAs: Be multilayers. Clear transitions between low-field-high-resistance and high …
Complex conjugate media: Alternative configurations for miniaturized lasers
D Dragoman - Optics Communications, 2011 - Elsevier
We show that complex conjugate materials, in which the ratio of the complex electrical
permittivity and the complex conjugate magnetic permeability is real, are characterized by a …
permittivity and the complex conjugate magnetic permeability is real, are characterized by a …
Ferromagnetic resonance study of the free-hole contribution to magnetization and magnetic anisotropy in modulation-doped
Ferromagnetic resonance (FMR) is used to study magnetic anisotropy of GaMnAs in a series
of Ga 1− x Mn x As∕ Ga 1− y Al y As heterostructures modulation-doped by Be. The FMR …
of Ga 1− x Mn x As∕ Ga 1− y Al y As heterostructures modulation-doped by Be. The FMR …
Interlayer exchange coupling in (Ga, Mn) As-based superlattices
The interlayer coupling between (Ga, Mn) As ferromagnetic layers in all-semiconductor
superlattices is studied theoretically within a tight-binding model, which takes into account …
superlattices is studied theoretically within a tight-binding model, which takes into account …
[HTML][HTML] High-temperature insulating ferromagnetic state in charge-disproportionated and spin-state-disproportionated strained SrCoO2. 5 thin film
Ferromagnetic insulators (FMIs) have widespread applications in microwave devices,
magnetic tunneling junctions, and dissipationless electronic and quantum-spintronic …
magnetic tunneling junctions, and dissipationless electronic and quantum-spintronic …
Investigation of weak interlayer exchange coupling in GaMnAs/GaAs superlattices with insulating nonmagnetic spacers
A robust long-range antiferromagnetic coupling between ferromagnetic Ga 0.97 Mn 0.03 As
layers has previously been realized via insertion of nonmagnetic Be-doped GaAs spacers …
layers has previously been realized via insertion of nonmagnetic Be-doped GaAs spacers …
Transition Metal-Doped Sb2Te3 and Bi2Te3 Diluted Magnetic Semiconductors.
YJ Chien - 2007 - deepblue.lib.umich.edu
Motivated by the discovery of the ferromagnetic order in V-doped Sb2Te3 and Fe-doped
Bi2Te3 bulk crystals, the study of the transition metal (TM) doped tetradymite-type …
Bi2Te3 bulk crystals, the study of the transition metal (TM) doped tetradymite-type …