Amorphous oxide semiconductors, especially indium oxide-based (InO x) thin films, have
been major candidates for high mobility with easy-to-use device processability. As for a …

Atomic layer deposition (ALD) is a promising deposition method to precisely control the
thickness and metal composition of oxide semiconductors, making them attractive materials …

We report the results of a study to enhance metal oxide (MO) thin-film transistor (TFT)
performance by do** both the semiconductor (In2O3) and gate dielectric (Al2O3) layers …

The frequency-dependent capacitance of low-temperature solution-processed metal oxide
(MO) dielectrics typically yields unreliable and unstable thin-film transistor (TFT) …

Because of increasing demand for CO 2 detection, CO 2 sensors capable of low-
temperature operation are desired. However, conventional oxide semiconductor sensors still …

In this study, hydrogen peroxide (H2O2) cosolvent, which was dissolved into supercritical-
phase carbon dioxide fluid (SCCO2), is employed to passivate excessive oxygen vacancies …

We report the aqueous-solution-processed Ni-doped In2O3 (Ni x In2–x O3, NiInO) thin-film
transistors (TFTs) for the first time. The effect of Ni do** on In2O3 microstructure, oxygen …

This study investigates the electrical characteristics and physical analysis for an amorphous
tungsten-doped indium-zinc oxide thin film transistor with different backchannel passivation …

We fabricated homogeneous double-layer amorphous Si-doped indium oxide (ISO) thin-film
transistors (TFTs) with an insulating ISO cap layer on top of a semiconducting ISO bottom …

Characteristics of thin-film transistors (TFTs) with amorphous In 2 O 3 (InO 1.2) and carbon-
doped In 2 O 3 (InO 1.16 C 0.04) channels by post-metallization annealing (PMA) process …