Ultra-wide bandgap materials show great promise as a solution to some of the limitations of
current state of the art semiconductor technology. Among these, diamond has exhibited …

Fundamental research and development of ultra-wide bandgap (UWBG) semiconductor
devices are under way to realize next-generation power conversion and wireless …

Diamond is a unique material that often exhibits extreme properties compared to other
materials. Discovered about 30 years ago, the use of hydrogen in plasma-enhanced …

While halide perovskite electronics are rapidly develo**, they are greatly limited by the
inferior charge transport and poor stability. In this work, effective surface charge transfer …

Diamond's properties (highest thermal conductivity, high hole & electron mobilities, & high
electric breakdown field) predict that diamond field‐effect transistors (FETs) will have …

We report on the large-scale synthesis of highly oriented ultrathin MoO3 layers using a
simple and low-cost atmospheric pressure, van der Waals epitaxy growth on muscovite mica …

Hydrogen sulfide (H 2 S) gas sensors in the form of thin films based on polyaniline (PAN)
incorporated with various concentrations of functionalized single wall carbon nanotubes (f …

Core-shell semiconductor nanostructures can be suitable for high-performance gas sensors
due to their unique structural features. In this study, In 2 O 3@ MoO 3 core-shell hollow …

Neutral silicon vacancy centers (SiV 0) in diamond are promising candidates for quantum
applications; however, stabilizing SiV 0 requires high-purity, boron-doped diamond, which is …

We report the first attempt of the diamond MOSFETs with MoO 3 dielectric directly deposited
on H-diamond surface preserving atmospheric-adsorbate-induced 2DHG. The transistors …