The paper reviews the interplay of Rashba/Dresselhaus spin splittings in various two‐
dimensional systems made of zinc‐blende III–V, wurtzite, and SiGe semiconductors. We …

Device concepts in semiconductor spintronics make long spin lifetimes desirable, and the
requirements put on spin control by proposals for quantum information processing are even …

The spin diffusion length is a key parameter to describe the transport properties of spin
polarized electrons in solids. Electrical spin injection in semiconductor structures, a major …

We present a detailed characterization of the growth dynamics of Ga (Al) As (111) A
surfaces. We develop a theoretical growth model that well describes the observed behavior …

Quantum dot (QD) growth on high (c3v) symmetry GaAs {111} surfaces holds promise for
efficient entangled photon sources. Unfortunately, homoepitaxy on GaAs {111} surfaces …

The control of" flying”(or moving) spin qubits is an important functionality for the manipulation
and exchange of quantum information between remote locations on a chip. Typically, gates …

Spin dephasing via the spin–orbit interaction is a major mechanism limiting the electron spin
lifetime in zincblende III–V quantum wells (QWs). QWs grown along the non‐conventional …

We report on the coherent control and transport of indirect-exciton (IX) spins in GaAs double
quantum well (DQW) nanostructures. The spin dynamics was investigated by optically …

We show by spatially and time-resolved photoluminescence that the application of an
electric field transverse to the plane of an intrinsic GaAs (111) quantum well (QW) allows the …

Time-resolved optical spectroscopy experiments in (111)-oriented GaAs/AlGaAs quantum
wells (QWs) show a strong electric field dependence of the conduction electron spin …