Thermodynamic theory of phase separation in nonstoichiometric Si oxide films induced by high-temperature anneals

A Sarikov - Nanomanufacturing, 2023‏ - mdpi.com
High-temperature anneals of nonstoichiometric Si oxide (SiOx, x< 2) films induce phase
separation in them, with the formation of composite structures containing amorphous or …

Plasmon induced modification of silicon nanocrystals photoluminescence in presence of gold nanostripes

SA Dyakov, DM Zhigunov, A Marinins, OA Shalygina… - Scientific reports, 2018‏ - nature.com
We report on the results of theoretical and experimental studies of photoluminescense of
silicon nanocrystals in the proximity to plasmonic modes of different types. In the studied …

Influence of phosphorus on the growth and the photoluminescence properties of Si-NCs formed in P-doped SiO/SiO 2 multilayers

F Trad, AE Giba, X Devaux, M Stoffel, D Zhigunov… - Nanoscale, 2021‏ - pubs.rsc.org
This work reports on the influence of phosphorous atoms on the phase separation process
and optical properties of silicon nanocrystals (Si-NCs) embedded in phosphorus doped …

Silicon rich silicon oxide films deposited by radio frequency plasma enhanced chemical vapor deposition method: optical and structural properties

S Mukhopadhyay, S Ray - Applied surface science, 2011‏ - Elsevier
Silicon rich silicon oxide films have been deposited by plasma enhanced chemical vapour
deposition using a gas mixture of silane, carbon-di-oxide and hydrogen. Silicon …

Raman studies of silicon nanocrystals embedded in silicon suboxide layers

NE Maslova, AA Antonovsky, DM Zhigunov… - Semiconductors, 2010‏ - Springer
Raman spectroscopy is used for the study of SiO x (x≈ 1) layers subjected to thermal
annealing at the temperatures from 950 to 1200° C to form Si nanocrystals inside the layers …

Silicon nanocrystals in SiNx/SiO2 hetero-superlattices: The loss of size control after thermal annealing

A Zelenina, A Sarikov, DM Zhigunov, C Weiss… - Journal of Applied …, 2014‏ - pubs.aip.org
Superlattices containing 3 nm thick silicon rich silicon nitride sublayers and 3 nm and 10 nm
thick SiO 2 barriers were prepared by plasma enhanced chemical vapor deposition. Despite …

On the question of the possibility of using nanocrystalline porous silicon in silicon-based solar cells

VM Rotshteyn, TK Turdaliev, KB Ashurov - Applied Solar Energy, 2021‏ - Springer
The method used to obtain nanocrystalline porous silicon by electrochemical etching is
described in detail, with a description of the cell itself with a reduction of its scheme and …

Photoluminescence of amorphous and crystalline silicon nanoclusters in silicon nitride and oxide superlattices

DV Shuleiko, SV Zabotnov, DM Zhigunov, AA Zelenina… - Semiconductors, 2017‏ - Springer
The photoluminescence properties of silicon nitride and oxide superlattices fabricated by
plasmaenhanced chemical vapor deposition are studied. In the structures annealed at a …

Structural optimization and quantum size effect of Si-nanocrystals in SiC interlayer fabricated with bio-template

MZ Molla, D Zhigunov, S Noda… - Materials Research …, 2019‏ - iopscience.iop.org
Abstract Amorphous SiC/Si multilayers were fabricated using alternately magnetron
sputtering of SiC and electron beam evaporation of Si targets. The as-deposited films were …

Spectral features of the photoresponse of structures with silicon nanoparticles

OS Ken, DA Andronikov, DA Yavsin, AV Kukin… - Semiconductors, 2014‏ - Springer
The spectral characteristics of the photoresponse of heterostructures with layers of densely
packed amorphous silicon nanoparticles produced by laser electrodispersion are studied …