SiGeSn holds great promise for enabling fully group-IV integrated photonics operating at
wavelengths extending in the mid-infrared range. Here, we demonstrate an electrically …

The success of GeSn alloys as active material for infrared lasers could pave the way toward
a monolithic technology that can be manufactured within mainstream silicon photonics …

Semiconductor membranes emerged as a versatile class of nanomaterials to control lattice
strain and engineer complex heterostructures enabling a variety of innovative applications …

GeSn alloys are nowadays considered as the most promising materials to build Group IV
laser sources on silicon (Si) in a full complementary metal oxide semiconductor-compatible …

GeSn alloys are promising candidates for complementary metal‐oxide‐semiconductor‐
compatible, tunable lasers. Relaxation of residual compressive strain in epitaxial GeSn has …

GeSn alloys have been regarded as a potential lasing material for a complementary metal–
oxide–semiconductor-compatible light source. Despite their remarkable progress, all GeSn …

The oxidation of chromium in air at 700° C was investigated with a focus on point defect
behavior and transport during oxide layer growth. A comprehensive set of characterization …

GeSn alloys are the most promising direct band gap semiconductors to demonstrate full
CMOS-compatible laser integration with a manufacturing from Group-IV materials. Here, we …

Over the last 30 years, group-IV semiconductors have been intensely investigated in the
quest for a fundamental direct bandgap semiconductor that could yield the last missing …

Rare-earth (RE) oxyhydride thin films show a color-neutral, reversible photochromic effect at
ambient conditions. The origin of the photochromism is the topic of current investigations …