Hydrogen‐associated multiple electronic phase transitions for d‐orbital transitional metal oxides: Progress, application, and beyond

X Zhou, H Li, Y Jiao, G Zhou, H Ji… - Advanced Functional …, 2024 - Wiley Online Library
Hydrogen‐associated electron do** Mottronics within d‐orbital transitional metal oxides
(TMOs) opens up a new paradigm to explore exotic physical phenomena that enable …

Surface modification engineering on polymer materials toward multilevel insulation properties and subsequent dielectric energy storage

S Sun, K Fan, J Yang, J Liu, X Li, L Zhao, X He, X Liu… - Materials Today, 2024 - Elsevier
Polymer materials have played crucial roles in current electrical device/equipment
especially in rapidly developed dielectric energy storage field, due to their excellent …

Fluorinated polyimide tunneling layer for efficient and stable perovskite photovoltaics

C Liu, W Yu, Y Li, C Wang, Z Zhang, C Li… - Angewandte …, 2024 - Wiley Online Library
Despite the remarkable progress of perovskite solar cells (PSCs), challenges remain in
terms of finding effective and viable strategies to enhance their long‐term stability while …

Extendable piezo/ferroelectricity in nonstoichiometric 2D transition metal dichalcogenides

Y Hu, L Rogée, W Wang, L Zhuang, F Shi… - Nature …, 2023 - nature.com
Engineering piezo/ferroelectricity in two-dimensional materials holds significant implications
for advancing the manufacture of state-of-the-art multifunctional materials. The inborn …

Interface-engineered ferroelectricity of epitaxial Hf0.5Zr0.5O2 thin films

S Shi, H **, T Cao, W Lin, Z Liu, J Niu, D Lan… - Nature …, 2023 - nature.com
Ferroelectric hafnia-based thin films have attracted intense attention due to their
compatibility with complementary metal-oxide-semiconductor technology. However, the …

Charge-state lifetimes of single molecules on few monolayers of NaCl

K Kaiser, LA Lieske, J Repp, L Gross - nature communications, 2023 - nature.com
In molecular tunnel junctions, where the molecule is decoupled from the electrodes by few-
monolayers-thin insulating layers, resonant charge transport takes place by sequential …

Epitaxial strain enhanced ferroelectric polarization toward a giant tunneling electroresistance

X Li, J Liu, J Huang, B Huang, L Li, Y Li, W Hu, C Li… - ACS …, 2024 - ACS Publications
A substantial ferroelectric polarization is the key for designing high-performance ferroelectric
nonvolatile memories. As a promising candidate system, the BaTiO3/La0. 67Sr0. 33MnO3 …

Giant tunnelling electroresistance through 2D sliding ferroelectric materials

J Yang, J Zhou, J Lu, Z Luo, J Yang, L Shen - Materials Horizons, 2022 - pubs.rsc.org
Very recently, ferroelectric polarization in staggered bilayer hexagonal boron nitride (BBN)
and its novel sliding inversion mechanism were reported experimentally (Science2021, 372 …

Stabilizing the Ferroelectric Phase of Thin Films by Charge Transfer

S Shi, T Cao, H **, J Niu, X **g, H Su, X Yu, P Yang… - Physical Review Letters, 2024 - APS
Ferroelectric hafnia-based thin films have attracted significant interest due to their
compatibility with complementary metal-oxide-semiconductor technology (CMOS) …

Symmetry engineering in 2D bioelectronics facilitating augmented biosensing interfaces

Y Wu, Y Liu, Y Li, Z Wei, S **ng, Y Wang, D Zhu… - Proceedings of the …, 2024 - pnas.org
Symmetry lies at the heart of two-dimensional (2D) bioelectronics, determining material
properties at the fundamental level. Breaking the symmetry allows emergent functionalities …