After the first unequivocal demonstration of spin transport in graphene [Tombros et al.,
Nature (London) 448, 571–574 (2007)], surprisingly at room temperature, it was quickly …

The explosive growth of the information era has put forward urgent requirements for
ultrahigh‐speed and extremely efficient computations. In direct contrary to charge‐based …

Graphene is an excellent material for long-distance spin transport but allows little spin
manipulation. Transition-metal dichalcogenides imprint their strong spin–orbit coupling into …

Interfacial interactions allow the electronic properties of graphene to be modified, as recently
demonstrated by the appearance of satellite Dirac cones in graphene on hexagonal boron …

Abstract 2D materials are important building blocks for the upcoming generation of
nanostructured electronics and multifunctional devices due to their distinct chemical and …

Artificial gauge fields are currently realized in a wide range of physical settings. This
includes solid-state devices but also engineered systems, such as photonic crystals …

We review current challenges and perspectives in graphene spintronics, which is one of the
most promising directions of innovation, given its room-temperature long-spin lifetimes and …

Future development in spintronic devices will require an advanced control of spin currents,
for example by an electric field. Here we demonstrate an approach that differs from previous …

Two-dimensional transition metal dichalcogenide semiconductors owning a large intrinsic
spin-orbit coupling (SOC) are considered the best candidates to generate, detect and …

In this review article we describe spin-dependent transport in materials with spin–orbit
interaction of Rashba type. We mainly focus on semiconductor heterostructures, however we …