Photovoltaics at the mesoscale: insights from quantum-kinetic simulation

U Aeberhard - Journal of Physics D: Applied Physics, 2018 - iopscience.iop.org
Abstract This Topical Review discusses insights into the physical mechanisms of
nanostructure solar cell operation as provided by numerical device simulation using a state …

NaNbO3/MoS2 and NaNbO3/BiVO4 Core−Shell Nanostructures for Photoelectrochemical Hydrogen Generation

S Kumar, T Malik, D Sharma… - ACS Applied Nano …, 2019 - ACS Publications
NaNbO3/MoS2 and NaNbO3/BiVO4 core–shell heterostructures show absorption range
extending to the visible region and high charge transfer rate at the interface and lower …

[HTML][HTML] Growth interruption strategies for interface optimization in GaAsSb/GaAsN type-II superlattices

V Braza, T Ben, S Flores, DF Reyes… - Applied Surface …, 2022 - Elsevier
Abstract Recently, GaAsSb/GaAsN type II short-period superlattices (SLs) have been
proposed as suitable structures to be implemented in the optimal design of monolithic multi …

Photocarrier extraction in GaAsSb/GaAsN type-II QW superlattice solar cells

U Aeberhard, A Gonzalo, JM Ulloa - Applied Physics Letters, 2018 - pubs.aip.org
Photocarrier transport and extraction in GaAsSb/GaAsN type-II quantum well superlattices
are investigated by means of inelastic quantum transport calculations based on the non …

Quantum scattering in one-dimensional periodic structures: A Green's function approach solved through continued fractions

LRN Oliveira, MGE da Luz - Physical Review B, 2024 - APS
In the present contribution, we discuss quantum scattering in 1D periodic finite lattices of N
localized potentials by means of an exact Green's function approach. By considering …

Modelling of the Sb and N distribution in type II GaAsSb/GaAsN superlattices for solar cell applications

DF Reyes, V Braza, A Gonzalo, AD Utrilla… - Applied Surface …, 2018 - Elsevier
GaAsSbN dilute nitrides are potential candidates for integration in high-performance multi-
junction solar cells due to the bandgap tunability in the 1.0–1.15 eV range and the possibility …

Carrier Dynamics and Transfer across the CdS/MoS2 Interface upon Optical Excitation

K Cheng, H Wang, J Bang, D West… - The Journal of …, 2020 - ACS Publications
Carrier dynamics across the interface of heterostructures have important technological,
photovoltaic, and catalytic implications. Using first-principles time-dependent density …

1 eV GaAsSbN–based solar cells for efficient multi-junction design: Enhanced solar cell performance upon annealing

A Gonzalo, L Stanojević, DF Marrón, A Guzman… - Solar energy, 2021 - Elsevier
In this work, we demonstrate the beneficial effect of post-growth rapid thermal annealing
(RTA) on the performance of~ 1 eV GaAsSbN-based solar cells. Different configurations of …

Open circuit voltage recovery in GaAsSbN-based solar cells: Role of deep N-related radiative states

A Gonzalo, L Stanojević, AD Utrilla, DF Reyes… - Solar Energy Materials …, 2019 - Elsevier
In this work we investigate the effect of rapid thermal annealing (RTA) on the performance of
solar cells consisting of different GaAsSbN-based structures and correlate the device results …

Compositional inhomogeneities in type-I and type-II superlattices for GaAsSbN-based solar cells: Effect of thermal annealing

V Braza, DF Reyes, A Gonzalo, AD Utrilla… - Applied Surface …, 2018 - Elsevier
GaAsSbN alloys is recognized as an effective candidate to incorporate in multijunction solar
cell applications due to its advantages of being grown lattice-matched to GaAs and its …