Major features of silicon carbide (SiC) power devices include high blocking voltage, low on-
state loss, and fast switching, compared with those of the Si counterparts. Through recent …

Power semiconductor devices are key components in power conversion systems. Silicon
carbide (SiC) has received increasing attention as a wide-bandgap semiconductor suitable …

Wide-bandgap semiconductors are expected to be applied to solid-state lighting and power
devices, supporting a future energy-saving society. While GaN-based white LEDs have …

The widespread use of 4H silicon carbide (4H-SiC) is just around the corner since high-
power electronics based on 4H-SiC are increasingly fabricated to enable the low-carbon …

The literature on direct conversion of radioisotope energy to electricity is reviewed.
Considerations of the choice of radioisotope, converter, and device design are discussed …

Despite the decades of development of the single-crystal growth and homoepitaxy of 4H
silicon carbide (4H-SiC), high-density threading dislocations (TDs) still remain in 4H-SiC. In …

Recent progress and current understanding of carrier lifetimes and avalanche phenomena
in silicon carbide (SiC) are reviewed. The acceptor level of carbon vacancy (VC), called the …

Materials with a negative dielectric permittivity (eg, metals) display high reflectance and can
be shaped into nanoscale optical resonators exhibiting extreme mode confinement, a …

The purpose of this work is to study the 4H-SiC epitaxial layer properties for the fabrication of
a device for neutron detection as an alternative material to diamond detectors used in this …

Although various silicon carbide (SiC) power devices with very high blocking voltages over
10 kV have been demonstrated, basic issues associated with the device operation are still …