Nanometre-scale semiconductor devices have been envisioned as next-generation
technologies with high integration and functionality. Quantum dots, or the so-called'artificial …

▪ Abstract Highly strained semiconductors grow epitaxially on mismatched substrates in the
Stranski-Krastanow growth mode, wherein islands are formed after a few monolayers of …

We have demonstrated efficient production of triggered single photons by coupling a single
semiconductor quantum dot to a three-dimensionally confined optical mode in a micropost …

Nanoscale science and technology is a young and burgeoning field that encompasses
nearly every discipline of science and engineering. With rapid advances in areas such as …

We demonstrated the 1.52 μm light emission at room temperature from self-assembled InAs
quantum dots embedded in the In 0.45 Ga 0.55 As strain-reducing layer. By cap** InAs …

The present paper reviews recent achievements in the fabrication of diode lasers for the
near-infrared range on GaAs substrates. 1.3 µm light emitters are currently widely used in …

Self-assembled semiconductor quantum dots (QDs) exhibit fully quantized electronic states
and high radiative efficiencies. This makes them highly suitable both for fundamental …

Self-organized In (Ga) As/Ga (Al) As quantum dots have emerged as useful nanostructures
that can be epitaxially grown and incorporated in the active region of devices. The near …

▪ Abstract As a result of their fully quantized electronic states and high radiative efficiencies,
self-assembled quantum dots have enabled major advances in fundamental physics studies …

In order to fulfil the requirements of the information society there is a growing demand for
nanoelectronic devices with new or largely improved performances; these devices are …